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A D-Band Integrated Signal Source Based on SiGe 0.18μm BiCMOS Technology

  • Jung, Seungyoon ;
  • Yun, Jongwon ;
  • Rieh, Jae-Sung
  • Received : 2015.04.07
  • Accepted : 2015.06.08
  • Published : 2015.10.31

Abstract

This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is $900{\times}1,890{\mu}m^2$, including RF and DC pads.

Keywords

Amplifier;D-Band;Frequency Doubler;Oscillator;Signal Source

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Cited by

  1. A CMOS 180-GHz Signal Source with an Integrated Frequency Doubler vol.16, pp.4, 2016, https://doi.org/10.5515/JKIEES.2016.16.4.229

Acknowledgement

Supported by : National Research Foundation