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Threshold Voltage Shift for Doping Profile of Asymmetric Double Gate MOSFET

도핑분포함수에 따른 비대칭 이중게이트 MOSFET의 문턱전압이동현상

Jung, Hakkee
정학기

  • Received : 2015.01.16
  • Accepted : 2015.02.17
  • Published : 2015.04.30

Abstract

This paper has analyzed threshold voltage shift for doping profile of asymmetric double gate(DG) MOSFET. Ion implantation is usually used in process of doping for semiconductor device and doping profile becomes Gaussian distribution. Gaussian distribution function is changed for projected range and standard projected deviation, and influenced on transport characteristics. Therefore, doping profile in channel of asymmetric DGMOSFET is affected in threshold voltage. Threshold voltage is minimum gate voltage to operate transistor, and defined as top gate voltage when drain current is $0.1{\mu}A$ per unit width. The analytical potential distribution of series form is derived from Poisson's equation to obtain threshold voltage. As a result, threshold voltage is greatly changed by doping profile in high doping range, and the shift of threshold voltage due to projected range and standard projected deviation significantly appears for bottom gate voltage in the region of high doping concentration.

Keywords

asymmetric double gate;threshold voltage;doping profile;Poisson equation;Gaussian distribution function

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