Bidirectional Current Triggering in Two-Terminal Planar Device Based on Highly Resistive Vanadium Dioxide Thin Film Using 966nm Near Infrared Laser

966nm 근적외선 레이저를 이용한 고저항성 바나듐 이산화물 박막 기반 2단자 평면형 소자에서의 양방향 전류 트리거링

  • Received : 2015.06.19
  • Accepted : 2015.09.30
  • Published : 2015.11.30


By incorporating a 966nm near infrared laser, we demonstrated bidirectional current triggering of between 0 and 10mA in a two-terminal planar device based on a highly resistive vanadium dioxide ($VO_2$) thin film grown by a pulsed laser deposition method. A two-terminal planar device, which had an electrode separation of $100{\mu}m$ and a $50{\mu}m-wide$ $VO_2$ conducting layer, was fabricated through ion beam-assisted milling and photolithographic techniques. A bias voltage range for stable bidirectional current triggering was determined by investigating the current-voltage curves of the $VO_2-based$ device in a current-controlled mode. Bidirectional current triggering of up to 10mA was realized by directly illuminating the $VO_2$ film with a focused infrared laser beam, and the transient responses of triggered currents were analyzed when the laser was modulated at various pulse widths and repetition rates. A switching contrast between off- and on-state currents was evaluated as ~3571, and the rising and falling times were measured as ~40 and ~20ms, respectively.


Vanadium Dioxide;Thin Film;Metal-Insulator Transition;Photothermal Effect;Switching


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Supported by : 한국연구재단