Study on Memristive Characteristics in Electronic Devices Based on Vanadium Dioxide Thin Films Using 966nm Laser Pulses

966nm 레이저 펄스를 이용한 바나듐 이산화물 박막 기반 전자 소자에서의 멤리스터 특성에 관한 연구

  • Received : 2015.07.31
  • Accepted : 2015.09.19
  • Published : 2015.11.30


By harnessing the thermal hysteresis behavior of vanadium dioxide($VO_2$), we demonstrated multi-resistance states in a two-terminal electronic device based on a $VO_2$ thin film by using a 966nm infrared laser diode as an excitation light source for resistance modulation. Before stimulating the device using 966nm laser pulses, the thermal hysteresis behavior of the device resistance was measured by using a temperature chamber. After that, the $VO_2$ device was thermally biased at ${\sim}71.6^{\circ}C$ so that its temperature fell into the thermal hysteresis region of the device resistance. Six multi-states of the device resistance could be obtained in the fabricated $VO_2$ device by five successive laser pulses with equal 10ms duration and increasing power. Each resistance states were maintained while the temperature bias was applied. And, the resistance fluctuation level was within 2.2% of the stabilized resistance and decreased down to less than 0.9% of the stabilized resistance 5s after the illumination.


Vanadium Dioxide;Thin Films;Metal-Insulator Transition;Memristor;Laser


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Supported by : 한국에너지기술평가원(KETEP)