Irradiation Induced Modifications of Amorphous Phase in GeTe Film

Park, Seung Jong;Jang, Moon Hyung;Ahn, Min;Yang, Won Jun;Han, Jeong Hwa;Cho, Mann-Ho

  • 투고 : 2015.04.11
  • 심사 : 2015.05.28
  • 발행 : 2015.05.30


The modified amorphous GeTe formed by pulsed laser irradiation in as-grown GeTe has been analyzed in terms of variations of local bonding structure using extended x-ray absorption fine structure (EXAFS). The modified GeTe film has octahedral-like Ge-Te bonding structure that can be effectively induced by irradiation process. The EXAFS data clearly shows that the irradiation can lead to reduction of the average coordination number. Variations in the transition temperature for the irradiated film during crystallization can be described by the presence of octahedral-like local structure.


Chalcogenide;Phase change;GeTe;EXAFS


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