High-Performance Silicon-on-Insulator Based Dual-Gate Ion-Sensitive Field Effect Transistor with Flexible Polyimide Substrate-based Extended Gate

유연한 폴리이미드 기판 위에 구현된 확장형 게이트를 갖는 Silicon-on-Insulator 기반 고성능 이중게이트 이온 감지 전계 효과 트랜지스터

Lim, Cheol-Min;Cho, Won-Ju

  • Received : 2015.10.16
  • Accepted : 2015.10.23
  • Published : 2015.11.01


In this study, we fabricated the dual gate (DG) ion-sensitive field-effect-transistor (ISFET) with flexible polyimide (PI) extended gate (EG). The DG ISFETs significantly enhanced the sensitivity of pH in electrolytes from 60 mV/pH to 1152.17 mV/pH and effectively improved the drift and hysteresis phenomenon. This is attributed to the capacitive coupling effect between top gate and bottom gate insulators of the channel in silicon-on-transistor (SOI) metal-oxide-semiconductor (MOS) FETs. Accordingly, it is expected that the PI-EG based DG-ISFETs is promising technology for high-performance flexible biosensor applications.


ISFET;Extended gate;Dual gate;Polyimide


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Supported by : 한국연구재단