DOI QR코드

DOI QR Code

Design of SCR-Based ESD Protection Circuit for 3.3 V I/O and 20 V Power Clamp

  • Jung, Jin Woo (Department of Electronics and Electrical Engineering, Dankook University) ;
  • Koo, Yong Seo (Department of Electronics and Electrical Engineering, Dankook University)
  • 투고 : 2014.06.19
  • 심사 : 2014.08.26
  • 발행 : 2015.02.01

초록

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

과제정보

연구 과제번호 : 정보통신용 아날로그 IP 기술 개발

참고문헌

  1. H. Nam and H. Jeong, "Data Supply Voltage Reduction Scheme for Low-Power AMOLED Displays," ETRI J., vol. 34, no. 5, Oct. 2012, pp. 727-733. https://doi.org/10.4218/etrij.12.0112.0139
  2. J.-I. Lee et al., "Dependence of Light-Emitting Characteristics of Blue Phosphorescent Organic Light-Emitting Diodes on Electron Injection and Transport Materials," ETRI J., vol. 34, no. 5, Oct. 2012, pp. 690-695. https://doi.org/10.4218/etrij.12.0112.0014
  3. Z. Zhao et al., "An Optimal Power Scheduling Method Applied in Home Energy Management System Based on Demand Response," ETRI J., vol. 35, no. 4, Aug. 2013, pp. 677-686. https://doi.org/10.4218/etrij.13.0112.0625
  4. M.-D. Ker and C.-C. Yen, "Investigation and Design of On-Chip Power-Rail ESD Clamp Circuits without Suffering Latch up-Like Failure During System-Level ESD Test," IEEE J. Solid-State Circuits, vol. 43, no. 11, Nov. 2008, pp. 2533-2545. https://doi.org/10.1109/JSSC.2008.2005451
  5. M.P.J. Mergens et al., "ESD Protection Considerations in Advanced High-Voltage Technologies for Automotive," Electr. Overstress/Electrostatic Discharge Symp., Anaheim, CA, USA, Sept. 10-15, 2006, pp. 54-63.
  6. K.-D. Kim et al., "A Study on the Novel SCR NANO ESD Protection Device Design and Fabrication," J. Institute Korean Electr. Electron. Eng., vol. 9, no. 2, Dec. 2005, pp. 161-169.
  7. B. Keppens et al., "ESD Protection Solutions for High Voltage Technologies," Electr. Overstress/Electrostatic Discharge Symp., Grapevine, TX, USA, Sept. 19-23, 2004, pp. 1-10.
  8. V.A. Vashchenko et al., "High Holding Voltage Cascoded LVTSCR Structures for 5.5 V Tolerant ESD Protection Clamps," IEEE Trans. Device Mater. Rel., vol. 4, no. 2, June 2004, pp. 273-280. https://doi.org/10.1109/TDMR.2004.826584
  9. ANSI/ESD STM5.5.1-2008, Electrostatic Discharge Sensitivity Testing - Transmission Line Pulse (TLP) - Component Level, 2008.
  10. J.E. Barth et al., "TLP Calibration, Correlation, Standards, and New Techniques," Electr. Overstress/Electrostatic Discharge Symp., Anaheim, CA, USA, Sept. 26-28, 2000, pp. 85-96.
  11. B.J. Baliga, "Fundamentals of Power Semiconductor Devices," New York, USA: Springer, 2008, pp. 101-104.