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Study on the Design of Power MOSFET for Smart LED Driver ICs Package

스마트 LED Driver ICs 패키지용 700 V급 Power MOSFET의 설계 최적화에 관한 연구

  • Received : 2016.01.20
  • Accepted : 2016.01.24
  • Published : 2016.02.01

Abstract

This research was designed 700 level power MOSFET for smart LED driver ICs package. And we analyzed electrical characteristics of the power MOSFET as like breakdown voltage, on-resistance and threshold voltage. Because this research is important optimal design for smart LED ICs package, we designed power MOSFET with design and process parameter. As a result of this research, we obtained $60{\mu}m$ N-drift layer depth, 791.29 V breakdown voltage, $0.248{\Omega}{\cdot}cm^2$ on resistance and 3.495 V threshold voltage. We will use effectively this device for smart LED driver ICs package.

Keywords

Smart LED;Power MOSFET;Breakdown voltage;On-resistance;Driver

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