Fabrication and Electrical Characteristics of Transparent and Bendable a-IGZO Thin-film Transistors

투명 유연 a-IGZO 박막트랜지스터의 제작 및 전기적 특성

Park, Sukhyung;Cho, Kyoungah;Oh, Hyungon;Kim, Sangsig

  • Received : 2015.12.11
  • Accepted : 2016.01.20
  • Published : 2016.02.01


In this study, we fabricate transparent and bendable a-IGZO (amorphous indium gallium zinc oxide) TFTs (thin-film transistors) with a-IZO (amorphous indium zinc oxide) transparent electrodes on plastic substrates and investigate their electrical characteristics under bending states. Our a-IGZO TFTs show a high transmittance of 82% at a wavelength of 550 nm. And these TFTs have an $I_{on}/I_{off}$ ratio of $1.8{\times}10^8$, a field effect mobility of $15.4cm^2/V{\cdot}s$, and a subthreshold swing of 186 mV/dec. The good electrical characteristics are retained even after bending with a curvature radius of 18 mm corresponding to a strain of 0.5% owing to mechanical durability of the transparent electrodes used in this study.




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Grant : 에너지 절감 및 분리형 전기렌지 개발

Supported by : 한국연구재단, 산업통상자원부