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Electrical Behavior of Aluminum Nitride Ceramics Sintered with Yttrium Oxide and Titanium Oxide

  • Lee, Jin-Wook (Engineering Ceramic Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Won-Jin (Engineering Ceramic Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Sung-Min (Engineering Ceramic Center, Korea Institute of Ceramic Engineering and Technology)
  • Received : 2016.09.20
  • Accepted : 2016.10.25
  • Published : 2016.11.30

Abstract

Electrical behavior of AlN ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to additional $TiO_2$ dopant. From the impedance spectroscopy, it was found that the grain and grain boundary conductivities have greatly decreased with addition of $TiO_2$ dopant. The $TiO_2$ dopant also increased the activation energy of the grain conductivity by about 0.37 eV; this increase was attributed to the formation of an associate between Al vacancies and Ti ions at the Al sites. Similarly, the electronic conductivity was reduced by $TiO_2$ addition. However, $TiO_2$ solubility in AlN grains was below the detection limit of typical EDX analysis. Grain boundary was clean, without liquid films, but did show yttrium segregation. The transference number of ions was close to 1, showing that AlN is a predominantly ionic conductor. Based on the observed results, the implications of using AlN applications as insulators have been discussed.

Acknowledgement

Supported by : Ministry of Trade, Industry and Energy

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