Study on Thermoelectric Properties of Cu Doping of Pulse-Electrodeposited n-type Bi2(Te-Se)3 Thin Films

펄스 전기도금법에 의해 제조된 n형 Bi2(Te-Se)3 박막의 Cu 도핑에 따른 열전특성에 관한 연구

  • Received : 2016.02.16
  • Accepted : 2016.02.29
  • Published : 2016.02.29


Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.


Electrodeposition;$Bi_2(Te-Se)_3$;modified Pulse electrodeposition;Cu;Doping;n-type thin film


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Supported by : 한국에너지기술평가원(KETEP)