Study of Dry Etching of SnO thin films using a Inductively Coupled Plasma

Inductively Coupled Plasma를 이용한 SnO 박막의 식각 특성 연구

  • Received : 2016.02.16
  • Accepted : 2016.02.26
  • Published : 2016.02.29


The dry etching characteristics of SnO thin films were investigated using inductively coupled plasma (ICP) in Ar, $CF_4$, $Cl_2$ chemistries. the SnO thin films were deposited by reactive rf magnetron sputtering with Sn metal target. In order to study the etching rates of SnO, the processing factors of processing pressure, source power, bias power, and etching gas were controlled. The etching behavior of SnO films under various conditions was obtained and discussed by comparing to that of $SiO_2$ films. In our results, the etch rate of SnO film was obtained as 94nm/min. The etch rates were mainly affected by physical etching and the contribution of chemical etching to SnO films appeared relatively week.


SnO thin Film;Inductively Coupled Plasma;Etching


  1. S. H. Choi, M. K. Han, Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress, Appl. Phys. Lett. 100, (2012) 043503.
  2. K. C. Lee, K. M. Jo, J. H. Lee, J. J. Kim, Y. W. Heo, Electrical and Optical Properties of Amorphous ITZO Deposited at Room Temperature by RF Magnetron Sputtering, J. Kor. Inst. Surf. Eng. 47 (2014) 239-243.
  3. K. Ebata, S. Tomai, Y. Tsuruma, T. Iitsuka, Shigeo Matsuzaki, Koki Yano, High-Mobility Thin-Film Transistors with Polycrystalline In-Ga-O Channel Fabricated by DC Magnetron Sputtering, Appl. Phys Express, 5 (2012) 011102.
  4. S. J. Hong, J. I. Han, Synthesis and characterization of indium tin oxide (ITO) nano-particle using gas evaporation process, J. Electro-ceram. 17, (2006) 821-826.
  5. C. L. A. Ricardo, M. D'Incau, M. Leoni, C. Malerba, A. Mittiga, P. Scardi, Structural properties of RF-magnetron sputtered $Cu_2O$ thin films, Thin solid films 520 (2011) 280-286.
  6. K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, S. J. Park, Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant, Appl. Phys. Lett. 83, (2003) 63-65.
  7. M. Snure, A. Tiwari, $CuBO_2$: A p-type transparent oxide, Appl. Phys. Lett. 91, (2007) 092123.
  8. P. W. Sadik, M. Ivill, V. Craciun , and D.P. Norton, Electrical transport and structural study of $CuCr_{1-x}Mg_xO_2$ delafossite thin films grown by pulsed laser deposition, Thin Solid Films 517, (2009) 3211-3215.
  9. H. Shimotani, H. Suzuki, K. Ueno, M. Kawas, Y. Iwasa, p-type field-effect transistor of NiO with electric double-layer gating, Appl. Phys. Lett. 92, (2008) 242107.
  10. Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono, p-channel thin-film transistor using p-type oxide semiconductor, SnO, Appl. Phys. Lett. 93, (2008) 032113.
  11. S. Y. Kim, J. C. Lee, I. S. Choi, J. H. Lee, J. J. Kim, Y. W. Heo, Growth of Mg Doped $CuCrO_2$ by Pulsed Laser Deposition, J. Kor. Inst. Surf. Eng. 42, (2009) 68-72.
  12. K. C. Yang, S. W. Park, T. H. Shin, G. Y. Yeom, Application of Pulsed Plasmas for Nanoscale Etching of Semiconductor Devices : A Review, J. Kor. Inst. Surf. Eng. 48, (2015) 360-370.
  13. J. C. Park, O. G. Jeong, J. K. Kim, Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of $InGaZnO_4$ films, Thin Solid Films 546 (2013) 136-140.
  14. K. Kim, Alexander Efremov, Junmyung Lee, Etching mechanisms of (In, Ga, Zn)O thin films in $CF4/Ar/O^{-2}$ inductively coupled plasma, J. Vac. Sci. Technol. A 33 (2015) 031601.
  15. K. H. Kwon, Alexander Efremov, Moonkeun Kim, Nam Ki Min, Jaehwa Jeong, and Kwangsoo Kim, Etching Characteristics of $In_2O_3$ and $SnO_2$ Thin Films in an Inductively Coupled HBr/Ar Plasma: Effects of Gas Mixing Ratio and Bias Power, Jpn. J. Appl. Phys. 49 (2010) 031103.
  16. H. R. Kim, J. B. Kim, Y. S. Choi, Electrical, Optical and Structural Properties of AZO Thin Film Deposited Using Facing Targets Magnetron Sputtering System with Inductively Coupled Plasma, Sci. Adv. Mater. 7 (2015) 107-112.


Supported by : 한국연구재단