Design of Two-Stage X-Band Power Amplifier Using GaN-HEMT

GaN-HEMT를 이용한 X-대역 이단 전력증폭기 설계

  • Received : 2015.09.25
  • Accepted : 2015.11.26
  • Published : 2016.01.31


This paper presents an X-band two-stage power amplifier using GaN-HEMT. Two-stage structure was adopted to take its high gain and simple inter-stage matching network. Based on a 3D EM simulation, the bond-wire inductance and the parasitic capacitance were predicted. By reducing bond-wire inductance, Q of the matching network is decreased and the bandwidth is improved. The implemented two-stage PA shows a power gain of more than 16 dB, saturated output power of more than 42.5 dBm, and a efficiency of more than 35 % in frequency range of 8.1~8.5 GHz with an operating voltage of 40 V.


GaN-HEMT;X-Band;Power Amplifier;Two-Stage Power Amplifier


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Supported by : 한국연구재단