Design of a 2.6 GHz GaN-HEMT Doherty Power Amplifier IC for Small-Cell Base Station Systems

Small-Cell 기지국 시스템을 위한 2.6 GHz GaN-HEMT Doherty 전력증폭기 집적회로 설계

Lee, Hwiseob;Lim, Wonseob;Kang, Hyunuk;Lee, Wooseok;Lee, Hyoungjun;Yoon, Jeongsang;Lee, Dongwoo;Yang, Youngoo

  • Received : 2015.09.24
  • Accepted : 2016.01.11
  • Published : 2016.02.29


This paper presents a 2.6 GHz Doherty power amplifier IC to enhance the back-off efficiency. In order to apply to small-cell base stations, the Doherty power amplifier was fabricated using GaN-HEMT process for high power density. In addition, the implemented Doherty power amplifier was mounted on a QFN package. The implemented GaN-HEMT Doherty power amplifier was measured using LTE downlink signal with 10 MHz bandwidth and 6.5 dB PAPR for verification. A power gain of 15.8 dB, a drain efficiency of 43.0 %, and an ACLR of -30.0 dBc were obtained at an average output power level of 33.9 dBm.


GaN-HEMT;Doherty Power Amplifier;Small-Cell Base Station;LTE


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Supported by : Ministry of Trade, Industry & Energy(MI)