A High Linearity Low Noise Amplifier Using Modified Cascode Structure

높은 선형성을 갖는 새로운 구조의 MMIC 저잡음 증폭기

  • Received : 2015.11.11
  • Accepted : 2016.01.27
  • Published : 2016.02.29


This letter proposes a low noise amplifier which has low noise figure and high linearity simultaneously using a cascode structure with an additional transistor. The proposed structure minimizes the noise source by using optimizing transistor sizes and also improves linearity from the current bleeding technique. The device was fabricated in a $0.5{\mu}m$ GaAs pHEMT process and has noise figure of 1.1 dB, a voltage gain of 15.0 dB, an $OIP_3$ of 30.8 dBm and an input/output return loss of 11.6 dB/10.4 dB from 1.8 to 2.6 GHz.


Low Noise Amplifier(LNA);Linearity;PCSNIM;Internal Matching


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