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A 2.65 GHz Doherty Power Amplifier Using Internally-Matched GaN-HEMT

내부정합된 GaN-HEMT를 이용한 2.65 GHz Doherty 전력증폭기

Kang, Hyunuk;Lee, Hwiseob;Lim, Wonseob;Kim, Minseok;Lee, Hyoungjun;Yoon, Jeongsang;Lee, Dongwoo;Yang, Youngoo
강현욱;이휘섭;임원섭;김민석;이형준;윤정상;이동우;양영구

  • Received : 2015.11.11
  • Accepted : 2016.01.26
  • Published : 2016.03.31

Abstract

This paper presents a 2.65 GHz Doherty power amplifier with internally-matched GaN HEMT. Internal matching circuits were adopted to match its harmonic impedances inside the package. Simultaneously, due to the partially matched fundamental impedance, input and output matching networks become simpler. Bond wires and parasitic elements of transistor package were predicted by EM simulation. For the LTE signal with 6.5 dB PAPR, the implemented Doherty power amplifier shows a power gain of 13.0 dB, a saturated output power of 55.4 dBm, an efficiency of 49.1 %, and ACLR of -26.3 dBc at 2.65 GHz with an operating voltage of 48 V.

Keywords

GaN-HEMT;Doherty Power Amplifier;Internal Matching Circuit;Package

References

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Acknowledgement

Supported by : Ministry of Trade, Industry & Energy(MI)