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Design of a W-Band Power Amplifier Using 65 nm CMOS Technology

65 nm CMOS 공정을 이용한 W-대역 전력증폭기 설계

Kim, Jun-Seong;Kwon, Oh-yun;Song, Reem;Kim, Byung-Sung
김준성;권오윤;송림;김병성

  • Received : 2016.01.12
  • Accepted : 2016.02.26
  • Published : 2016.03.31

Abstract

In this paper, we propose 77 GHz power amplifier for long range automotive collision avoidance radar using 65 nm CMOS process. The proposed circuit has a 3-stage single power amplifier which includes common source structure and transformer. The measurement results show 18.7 dB maximum voltage gain at 13 GHz 3 dB bandwidth. The measured maximum output power is 10.2 dBm, input $P_{1dB}$ is -12 dBm, output $P_{1dB}$ is 5.7 dBm, and maximum power add efficiency is 7.2 %. The power amplifier consumes 140.4 mW DC power from 1.2 V supply voltage.

Keywords

Power Amplifier;CMOS;W-Band

References

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Acknowledgement

Supported by : 한국연구재단