Review of Hazardous Agent Level in Wafer Fabrication Operation Focusing on Exposure to Chemicals and Radiation

반도체 산업의 웨이퍼 가공 공정 유해인자 고찰과 활용 - 화학물질과 방사선 노출을 중심으로 -

  • Received : 2016.03.11
  • Accepted : 2016.03.20
  • Published : 2016.03.31


Objectives: The aim of this study is to review the results of exposure to chemicals and to extremely low frequency(ELF) magnetic fields generated in wafer fabrication operations in the semiconductor industry. Methods: Exposure assessment studies of silicon wafer fab operations in the semiconductor industry were collected through an extensive literature review of articles reported until the end of 2015. The key words used in the literature search were "semiconductor industry", "wafer fab", "silicon wafer", and "clean room," both singly and in combination. Literature reporting on airborne chemicals and extremely low frequency(ELF) magnetic fields were collected and reviewed. Results and Conclusions: Major airborne hazardous agents assessed were several organic solvents and ethylene glycol ethers from Photolithography, arsenic from ion implantation and extremely low frequency magnetic fields from the overall fabrication processes. Most exposures to chemicals reported were found to be far below permissible exposure limits(PEL) (10% < PEL). Most of these results were from operators who handled processes in a well-controlled environment. In conclusion, we found a lack of results on exposure to hazardous agents, including chemicals and radiation, which are insufficient for use in the estimation of past exposure. The results we reviewed should be applied with great caution to associate chronic health effects.


ELF;retrospective exposure;wafer fabrication operation


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