DOI QR코드

DOI QR Code

Fault Analysis of Semiconductor Device

반도체 장치의 결함해석

Park, S.J.;Choi, S.B.;Oh, C.S.
박석준;최성배;오창섭

  • Received : 2015.09.25
  • Accepted : 2016.02.05
  • Published : 2016.03.31

Abstract

We have surveyed on technical method of fault analysis of semiconductor device. Fault analysis of semiconductor should first be found the places of fault spots. For this process they are generally used the testers; EB(emission beam tester), EM(emission microscope), OBIRCH(optical beam induced resistance change method) and LVP(laser voltage probing) etc. Therefore we have described about physical interpretation and technical method in using scanning electron microscope, transmission electron microscope, focused ion beam tester and Nano prober.

Keywords

semiconductor device;fault analysis of semiconductor;SEM;TEM;FIB

References

  1. Y. Mitsui etc. Ext. Abst. IEDM, (1988) 329-332
  2. K. Nikawa: IEICE Trans. Electron., vol.E85-C, 3 (2002),746-751
  3. Konno Takashi etc. "LSI Testing Symposium 2002 report" (2002), 189-194
  4. Konno Takashi etc. "LSI Testing Symposium 2003 report" (2002), 61-66
  5. Hatano Masakastu etc. "LSI Testing Symposium 2004 report" (2004) 335-340
  6. Sikai Tetsya etc. "LSI Testing Symposium 2004 report" (2004), 341-345
  7. Mizuno Takashi etc. "LSI Testing Symposium 2004 report" (2004) 359-362
  8. Konno Takashi etc. "LSI Testing Symposium 2003 report" (2004), 147-152