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Relation of Oxide Thickness and DIBL for Asymmetric Double Gate MOSFET

비대칭 이중게이트 MOSFET에서 산화막 두께와 DIBL의 관계

  • Received : 2015.12.16
  • Accepted : 2016.01.12
  • Published : 2016.04.30

Abstract

To analyze the phenomenon of drain induced barrier lowering(DIBL) for top and bottom gate oxide thickness of asymmetric double gate MOSFET, the deviation of threshold voltage is investigated for drain voltage to have an effect on barrier height. The asymmetric double gate MOSFET has the characteristic to be able to fabricate differently top and bottom gate oxide thickness. DIBL is, therefore, analyzed for the change of top and bottom gate oxide thickness in this study, using the analytical potential distribution derived from Poisson equation. As a results, DIBL is greatly influenced by top and bottom gate oxide thickness. DIBL is linearly decreased in case top and bottom gate oxide thickness become smaller. The relation of channel length and DIBL is nonlinear. Top gate oxide thickness more influenced on DIBL than bottom gate oxide thickness in the case of high doping concentration in channel.

Keywords

Asymmetric Double Gate;DIBL;Poisson Equation;Top and Bottom Gate Oxide Thickness

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