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Analysis of Tunneling Current of Asymmetric Double Gate MOSFET for Ratio of Top and Bottom Gate Oxide Film Thickness

비대칭 DGMOSFET의 상하단 산화막 두께비에 따른 터널링 전류 분석

Jung, Hakkee
정학기

  • Received : 2016.01.22
  • Accepted : 2016.03.07
  • Published : 2016.05.31

Abstract

This paper analyzes the deviation of tunneling current for the ratio of top and bottom gate oxide thickness of short channel asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current significantly increases if channel length reduces to 5 nm. This short channel effect occurs for asymmetric DGMOSFET having different top and bottom gate oxide structure. The ratio of tunneling current in off current with parameters of channel length and thickness, doping concentration, and top/bottom gate voltages is calculated in this study, and the influence of tunneling current to occur in short channel is investigated. The analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for the ratio of top and bottom gate oxide thickness in short channel asymmetric DGMOSFET, specially according to channel length, channel thickness, doping concentration, and top/bottom gate voltages.

Keywords

Tunneling current;Poisson equation;Top/bottom oxide thickness;WKB approximation

References

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