Thermal Conductivity Analysis of Amorphous Silicon Formed by Natural Cooling: A Molecular-dynamics Study

Lee, Byoung Min

  • Received : 2016.03.25
  • Accepted : 2016.05.18
  • Published : 2016.05.31


To investigate the thermal conductivity and the structural properties of naturally cooled excimer-laser annealed Si, molecular-dynamics (MD) simulations have been performed. The thermal conductivity of crystalline Si (c-Si) was measured by direct method at 1000 K. Steady-state heat flow was measured using a stationary temperature profile; significant deviations from Fourier's law were not observed. Reliable processes for measuring the thermal conductivity of c-Si were presented. A natural cooling process to admit heat flow from molten Si (l-Si) to c-Si was performed using an MD cell with a size of $48.9{\times}48.9{\times}97.8{\AA}^3$. During the cooling process, the temperature of the bottom $10{\AA}$ of the MD cell was controlled at 300 K. The results suggest that the natural cooling system described the static structural property of amorphous Si (a-Si) well.


MD simulations;Silicon;Thermal conductivity;Natural cooling;Static structure factors


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Grant : 제조혁신 전문인력양성

Supported by : 한국생산기술연구원(재단)