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A Review on Silicon Oxide Sureface Passivation for High Efficiency Crystalline Silicon Solar Cell

고효율 결정질 실리콘 태양전지 적용을 위한 실리콘 산화막 표면 패시베이션

  • Received : 2016.04.04
  • Accepted : 2016.05.13
  • Published : 2016.06.01

Abstract

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.

Keywords

Passivation;Chemical passivation;Plasma growth;Silicon oxide

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Acknowledgement

Supported by : Korea Institute of Energy Technology Evaluation and Planning (KETEP)