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Improving the Reliability by Straight Channel of As2Se3-based Resistive Random Access Memory

As2Se3 기반 Resistive Random Access Memory의 채널 직선화를 통한 신뢰성 향상

  • Received : 2016.03.22
  • Accepted : 2016.05.18
  • Published : 2016.06.01

Abstract

Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous $As_2Se_3$-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous $As_2Se_3$ thin film for straight conductive channel. The optical parameters of amorphous $As_2Se_3$ thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser.$ Ag^+$ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.

Keywords

ReRAM;Holographic patterns;Straight channel

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Acknowledgement

Supported by : 광운대학교