DOI QR코드

DOI QR Code

NiO-transparent Metal-oxide Semiconductor Photoelectric Devices

NiO 기반의 투명 금속 산화물 반도체 광전소자

  • Received : 2016.04.07
  • Accepted : 2016.05.24
  • Published : 2016.06.01

Abstract

NiO serves as a window layer for Si photoelectric devices. Due to the wide energy bandgap of NiO, high optical transparency (over 80%) was achieved and applied for Si photoelectric devices. Due to the high the high mobility, the heterojunction device (Al/n-Si/$SiO_2$/p-NiO/ITO) provide ultimately fast photoresponses of rising time of $38.33{\mu}s$ and falling time of $39.25{\mu}s$, respectively. This functional NiO layer would provide benefits for high-performing photoelectric devices, including photodetectors and solar cells.

Keywords

Metal-oxide semiconductor;NiO;ITO;Heterojunction;Photoelectric device;Photodetector;Solar cell

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Acknowledgement

Supported by : Korea Institute of Energy Technology Evaluation and Planning