NiO-transparent Metal-oxide Semiconductor Photoelectric Devices

NiO 기반의 투명 금속 산화물 반도체 광전소자

  • Received : 2016.04.07
  • Accepted : 2016.05.24
  • Published : 2016.06.01


NiO serves as a window layer for Si photoelectric devices. Due to the wide energy bandgap of NiO, high optical transparency (over 80%) was achieved and applied for Si photoelectric devices. Due to the high the high mobility, the heterojunction device (Al/n-Si/$SiO_2$/p-NiO/ITO) provide ultimately fast photoresponses of rising time of $38.33{\mu}s$ and falling time of $39.25{\mu}s$, respectively. This functional NiO layer would provide benefits for high-performing photoelectric devices, including photodetectors and solar cells.


Metal-oxide semiconductor;NiO;ITO;Heterojunction;Photoelectric device;Photodetector;Solar cell


  1. A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Thin Solid Films, 438, 38 (2005). [DOI:
  2. K. H. Kim, H. S. Kim, M. Patel, and J. D. Kim, J. Korean Inst. Electr. Electron. Mater. Eng., 28, 808 (2015).
  3. H. Kim, C. M. Gilmore, A. Pique, J. S. Horwitz, H. Mattoussi, H. Murata, Z. H. Kafafi, and D. B. Chrisey, J. Appl. Phys., 86, 6451 (1999). [DOI:]
  4. T. Karasawa and Y. Miyata, Thin Solid Films, 223, 135 (1993). [DOI:]
  5. S. Ishibashi, Y. Higuchi, Y. Ota, and K. Nakamura, J. Vac. Sci. Technol. A, 8 1403 (1990). [DOI:]
  6. M. D. Kumar, H. K. Kim, and J. D. Kim, Sensors and Actuators A, 223, 290 (2015).
  7. C. Battaglia, S. M. de Nicolas, S. D. Wolf, X. Yin, M. Zheng, C. Ballif, and A. Javey, Applied Physics Letters, 104, 113902 (2014). [DOI:]
  8. L. G. Gerling, S. Mahato, C. Voz, R. Alcubilla, and J. Puigdollers, Appl. Sci., 5, 695 (2015). [DOI:]
  9. K. M. Kang, J. H. Yoon, Y. C. Park, and J. D. Kim, J. Korean Inst. Electr. Electron. Mater. Eng., 27, 276 (2014).
  10. Z. H. Wang, S. H. Lee, D. H. Kim, J. H. Kim, and J. K. Park, Solar Energy Materials and Solar Cells, 94, 1592 (2010).


Supported by : Korea Institute of Energy Technology Evaluation and Planning