Enhancing Solar Cell Properties of Heterojunction Solar Cell in Amorphous Silicon Carbide

수광층의 카바이드 함량 변화에 따른 실리콘 이종접합 태양전지 특성 변화

Kim, Hyunsung;Kim, Sangho;Lee, Youngseok;Jeong, Jun-Hui;Kim, Yongjun;Dao, Vinh Ai;Yi, Junsin
김현성;김상호;이영석;정준희;김용준;다오빈 아이;이준신

  • Received : 2016.04.11
  • Accepted : 2016.05.24
  • Published : 2016.06.01


In this paper, the efficiency improvement of the heterojunction with intrinsic thin layer (HIT) solar cells is obtained by optimization process of p-type a-SiC:H as emitter. The optoelectronic of p-type a-SiC:H layers including the optical band-gap and conductivity under the methane gas content variation is conducted in detail. A significant increase in the Jsc by $1mA/cm^2$ and Voc by 30 mV are attributed to enhanced photon-absorption due to broader band-gap of p-a-SiC:H and reduced band-offsets at p-side interface, respectively of HIT solar cells.


Heterojunction solar cell;Wide bandgap;Carbide;Conductivity;Absorption


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Supported by : 한국에너지기술평가원(KETEP)