Design of silicon-on-nothing structure based on multi-physics analysis

Song, Jihwan;Zhang, Linan;Kim, Dongchoul

  • Received : 2015.11.03
  • Accepted : 2016.04.25
  • Published : 2016.07.25


The formation of silicon-on-nothing (SON) structure during an annealing process from the silicon substrate including the trench structures has been considered as an effective technique to construct the structure that has an empty space under the closed flat surface. Previous studies have demonstrated the mechanism of the formation of SON structure, which is based on the surface diffusion driven by the minimization of their surface energy. Also, it has been fragmentarily shown that the morphology of SON structure can be affected by the initial design of trench (e.g., size, number) and the annealing conditions (e.g., temperature, pressure). Based on the previous studies, here, we report a comprehensive study for the design of the cavity-embedded structure (i.e., SON structure). To do this, a dynamic model has been developed with the phase field approach. The simulation results represent that the morphology of SON structures could be detailedly designed, for example the position and thickness of cavity, the thickness of top and bottom layer, according to the design parameters. This study will give us an advantage in the effective design of SON structures.


SON structure;morphological design;phase field model;multi-physics analysis


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Supported by : National Research Foundation of Korea (NRF), Ministry of Trade, industry & Energy (MI)