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The Role of a Wiring Model in Switching Cell Transients: the PiN Diode Turn-off Case

  • Jedidi, Atef (Lab. of Microelectronics and Instrumentation, Dept. of Physics, University of Monastir) ;
  • Garrab, Hatem (Higher Institute of Applied sciences and Technology of Sousse, University of Sousse) ;
  • Morel, Herve (Ampere Laboratory, National Institute of Applied Science, University of Lyon) ;
  • Besbes, Kamel (Lab. of Microelectronics and Instrumentation, Dept. of Physics, University of Monastir)
  • Received : 2016.04.11
  • Accepted : 2016.11.19
  • Published : 2017.03.20

Abstract

Power converter design requires simulation accuracy. In addition to the requirement of accurate models of power semiconductor devices, this paper highlights the role of considering a very good description of the converter circuit layout for an accurate simulation of its electrical behavior. This paper considers a simple experimental circuit including one switching cell where a MOSFET transistor controls the diode under test. The turn-off transients of the diode are captured, over which the circuit wiring has a major influence. This paper investigates the necessity for accurate modeling of the experimental test circuit wiring and the MOSFET transistor. It shows that a simple wiring inductance as the circuit wiring representation is insufficient. An adequate model and identification of the model parameters are then discussed. Results are validated through experimental and simulation results.

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