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Temperature Dependent Photoluminescence from InAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy

  • Lee, Kyoung Su (Department of Physics and Research Institute for Natural Sciences, Hanyang University) ;
  • Oh, Gyujin (Department of Physics and Research Institute for Natural Sciences, Hanyang University) ;
  • Kim, Eun Kyu (Department of Physics and Research Institute for Natural Sciences, Hanyang University) ;
  • Song, Jin Dong (Opto-Electronic Convergence System, Korea Institute of Science and Technology)
  • Received : 2017.06.16
  • Accepted : 2017.07.12
  • Published : 2017.07.31

Abstract

We have reported structural and optical properties of self-assembled InAs/GaAs quantum dot (QD) grown by molecular beam epitaxy with different arsenic to indium flux ratios (V/III ratios). By increasing the V/III ratio from 9 to 160, average diameter and height of the InAs QDs decreased, but areal density of them increased. The InAs QDs grown under V/III ratio of 30 had a highest-aspect-ratio of 0.134 among them grown with other conditions. Optical property of the InAs QD was investigated by the temperature-dependent photoluminescence (PL) and integrated PL. From the temperature dependence PL measurements of InAs QDs, the activation energies of $E_{a1}$ and $E_{a2}$ for the InAs QDs were obtained $48{\pm}3meV$ and $229{\pm}23meV$, respectively. It was considered that the values of $E_{a1}$ and $E_{a2}$ are corresponded to the energy difference between ground-state and first excited state, and the energy difference between ground-state and wetting layer, respectively.

Acknowledgement

Supported by : Korea Institute of Energy Technology Evaluation and Planning (KETEP)

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