Electrical Characteristics of SiC Lateral P-i-N Diodes Fabricated on SiC Semi-Insulating Substrate

  • Kim, Hyoung Woo (Power Semiconductor Research Center at KERI) ;
  • Seok, Ogyun (Power Semiconductor Research Center at KERI) ;
  • Moon, Jeong Hyun (Power Semiconductor Research Center at KERI) ;
  • Bahng, Wook (Power Semiconductor Research Center at KERI) ;
  • Jo, Jungyol (Dept. of Electrical and Computer Engineering, Ajou University)
  • Received : 2017.07.11
  • Accepted : 2017.08.04
  • Published : 2018.01.01


Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

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Fig. 1. (a) Cross-sectional view and (b) top-view of thelateral p-i-n diode

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Fig. 2. Simulated breakdown voltages as a function ofdiode length (LAC)

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Fig. 3. Surface electric field distributions simulated atVanode = -300 V

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Fig. 4. Forward characteristics of the device simulationresults

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Fig. 5. Reverse I-V characteristics of lateral p-i-n diodesimplemented on (a) HPSI and (b) VDSI substrate

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Fig. 6. Measured and simulated breakdown voltage as afunction of LAC

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Fig. 7. Forward I-V characteristics of the device imple-mented on (a) HPSI and (b) VDSI

Table 1. Device parameters used in fabrication

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Grant : The Strategic Core Material Technology Development Program

Supported by : Ministry of Trade, Industry & Energy (MI)


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