An I-V Circuit with Combined Compensation for Infrared Receiver Chip

  • Tian, Lei (Dept. of Electronic Engineering, Xi'an University of Posts and Telecommunications) ;
  • Li, Qin-qin (Dept. of Electronic Engineering, Xidian University, CAD Institute) ;
  • Chang, Shu-juan (Dept. of Electronic Engineering, Xi'an University of Posts and Telecommunications)
  • Received : 2016.12.29
  • Accepted : 2017.11.07
  • Published : 2018.03.01


This paper proposes a novel combined compensation structure in the infrared receiver chip. For the infrared communication chip, the current-voltage (I-V) convert circuit is crucial and important. The circuit is composed by the transimpedance amplifier (TIA) and the combined compensation structures. The TIA converts the incited photons into photocurrent. In order to amplify the photocurrent and avoid the saturation, the TIA uses the combined compensation circuit. This novel compensation structure has the low frequency compensation and high frequency compensation circuit. The low frequency compensation circuit rejects the low frequency photocurrent in the ambient light preventing the saturation. The high frequency compensation circuit raises the high frequency input impedance preserving the sensitivity to the signal of interest. This circuit was implemented in a $0.6{\mu}m$ BiCMOS process. Simulation of the proposed circuit is carried out in the Cadence software, with the 3V power supply, it achieves a low frequency photocurrent rejection and the gain keeps 109dB ranging from 10nA to $300{\mu}A$. The test result fits the simulation and all the results exploit the validity of the circuit.


Supported by : National scientific research foundation of China


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