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Study of Several Silica Properties Influence on Sapphire CMP

  • Wang, Haibo (Department of Electronic Information Engineering, Hefei Normal University) ;
  • Zhang, Zhongxiang (Department of Electronic Information Engineering, Hefei Normal University) ;
  • Lu, Shibin (Department of Electronic Information Engineering, Hefei Normal University)
  • Received : 2017.09.25
  • Accepted : 2017.11.27
  • Published : 2018.03.01

Abstract

Colloid silica using as abrasive for polishing sapphire has been extensively studied, which mechanism has also been deeply discussed. However, by the requirement of application enlargement and cost reduction, some new problems appear such as silica service life time, particle diameter mixing, etc. In this paper, several influences of colloid silica usage on sapphire CMP are examined. Results show particle diameter and concentration, pH value, service life time, particle diameter mixing heavily influence removal rate. Further analysis discloses there are two main effect aspects which are quantity of hydroxyl group, contact area for abrasive density stacking between abrasive and sapphire. Based on the discussions, a dynamic process of sapphire polishing is proposed.

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