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Excitation Intensity- and Temperature-Dependent Photoluminescence Study of InAs/GaAs Sub-monolayer-Quantum Dot

  • Kim, Minseak (Department of Physics, Yeungnam University) ;
  • Jo, Hyun Jun (Department of Physics, Yeungnam University) ;
  • Kim, Yeongho (Korea Research Institute of Standards and Science) ;
  • Lee, Seung Hyun (Department of Electrical and Computer Engineering, Ohio State University) ;
  • Lee, Sang Jun (Korea Research Institute of Standards and Science) ;
  • Honsberg, Christiana B. (School of Electrical, Computer and Energy Engineering, Arizona State University) ;
  • Kim, Jong Su (Department of Physics, Yeungnam University)
  • Received : 2018.07.16
  • Accepted : 2018.09.21
  • Published : 2018.09.30

Abstract

Optical properties of InAs/GaAs submonolayer-quantum dot (SML-QD) have been investigated using excitation intensity ($I_{ex}$)- and temperature-dependent photoluminescence (PL). At a low temperature (13 K) strong PL was observed at 1.420 eV with a very narrow full-width at half maximum, of 7.09 meV. The results of the $I_{ex}$ dependence show that the PL intensities increase with increasing $I_{ex}$. The enhancement factors (k) of PL increment as a function of $I_{ex}$ are 3.3 and 1.22 at low and high $I_{ex}$ regime, respectively. The high k value at low $I_{ex}$, implies that the activation energy of the SML-QDs is low. The calculated activation energy of the SML-QDs from temperature dependence is 30 meV.

Acknowledgement

Supported by : National Research Foundation of Korea (NRF)

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