- Volume 67 Issue 6
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A Radiation-hardened Model Design of CMOS Digital Logic Circuit for Nuclear Power Plant IC and its Total Radiation Damage Analysis
원전용 IC를 위한 CMOS 디지털 논리회로의 내방사선 모델 설계 및 누적방사선 손상 분석
- Lee, Min-Woong (Korea Atomic Energy research Institute(KAERI)) ;
- Lee, Nam-Ho (Korea Atomic Energy research Institute(KAERI)) ;
- Kim, Jong-Yeol (Korea Atomic Energy research Institute(KAERI)) ;
- Cho, Seong-Ik (Dept. of Electronic Engineering, Chonbuk National University)
- Received : 2018.03.07
- Accepted : 2018.05.29
- Published : 2018.06.01
ICs(Integrated circuits) for nuclear power plant exposed to radiation environment occur malfunctions and data errors by the TID(Total ionizing dose) effects among radiation-damage phenomenons. In order to protect ICs from the TID effects, this paper proposes a radiation-hardening of the logic circuit(D-latch) which used for the data synchronization and the clock division in the ICs design. The radiation-hardening technology in the logic device(NAND) that constitutes the proposed RH(Radiation-hardened) D-latch is structurally more advantageous than the conventional technologies in that it keeps the device characteristics of the commercial process. Because of this, the unit cell based design of the RH logic device is possible, which makes it easier to design RH ICs, including digital logic circuits, and reduce the time and cost required in RH circuit design. In this paper, we design and modeling the structure of RH D-latch based on commercial
Grant : 원자력연구개발사업
Supported by : 한국연구재단
- A. S. Sedra and K. C. Smith, Microelectronic Circuits, 5th ed. New York: Oxford, 2004.
- H. M. Hashemian, "Maintenance of Process Instrumentation in Nuclear Power Plants," Springer Press, 2006.
- G. C. Messenger and M. S. Ash, "The Effects of Radiation On Electronic Systems," Springer Press, 1992.
- T. R. Oldham and F. B. Mclean, "Total Ionizing Dose Effects in MOS Oxides and Devices," IEEE Trans. Nul. Sci., vol. 50, no. 3, pp. 483-496, Jun. 2003. https://doi.org/10.1109/TNS.2003.812927
- H. J. Barnaby, "Total-Ionizing-Dose Effects in Modern CMOS Technologies," IEEE Trans. Nul. Sci., vol. 53, no. 6, pp. 3103-3120, Dec. 2006.
- T. R. Oldham and A. J. Lelis, "Post-Irradiation Effects in Field Oxide Isolation structures," IEEE Trans. Nul. Sci., vol. 34, no. 6, pp. 1184-1189, Dec. 1987. https://doi.org/10.1109/TNS.1987.4337450
- D. M. Fleetwood, P. S. Winokur, R. A. Reber, T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt and L. C. Riewe, "Effects of oxide traps, interface traps, and 'border traps' on metal-oxide-semiconductor devices," J. Appl. Phys., vol. 73, pp. 5058-5074, May 1993. https://doi.org/10.1063/1.353777
- S. C. Oh, N. H. Lee, and H. H. Lee, "The Study of Transient Radiation Effects on Commercial Electronic Devices", Trans. KIEE, vol. 61, no. 10, pp. 1448-1453, Oct. 2012.
- J. Y. Kim, N. H. Lee, H. K. Jung, S. C. Oh, "The study of radiation hardened common sensor circuits using COTS semiconductor devices for the nuclear power plant", Trans. KIEE, vol. 63, no. 9, pp. 1248-1252, Sep. 2014.
- W. J. Snoeys, "A New NMOS Layout Structure for Radiation Tolerance," IEEE Trans. Nul. Sci., vol. 49, no. 4, Aug. 2002.
- Li Chen and D. M. Gingrich. "Study of N-Channel MOSFETs with an Enclosed-Gate Layout in a 0.18um CMOS technology," IEEE Trans. Nul. Sci., vol. 52, no. 4, pp. 861-867, Oct. 2005. https://doi.org/10.1109/TNS.2005.852652
- M. S. Lee and H. C. Lee, "Dummy Gate-Assisted n-MOSFET Layout for a Radiation-Tolerant Integrated Circuit", IEEE Trans. Nul. Sci., vol. 60, no. 4, pp. 3084-3091, Aug. 2013.
- Y. Li et al. "Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX," IEEE Trans. Nucl. Sci., vol. 48, pp. 2146-2151, Dec. 2001. https://doi.org/10.1109/23.983187
- M. W. Lee, N. H. Lee, S. H. Jeong, S. M. Kim and S. I. Cho, "Implementation of a radiation-hardened I-gate n-MOSFET and analysis of its TID(Total Ionizing Dose) effects" Journal of Electrical Engineering & Technology, vol. 12, pp. 1619-1626, Jun. 2017.
- N. Saks, M. Ancona and J. Modolo, "Generation of interface states by ionizing radiation in very thin MOS oxides," IEEE Trans. Nucl. Sci., vol. 33 no. 6, pp. 1185-1190, Nov. 1986. https://doi.org/10.1109/TNS.1986.4334576