DOI QR코드

DOI QR Code

Ku-Band 50-W GaN HEMT Internally-Matched Power Amplifier

Ku-대역 50 W급 GaN HEMT 내부 정합 전력증폭기

  • Kim, Seil (Department of Radio & Information Communications Engineering, Chungnam National University) ;
  • Lee, Min-Pyo (Department of Radio & Information Communications Engineering, Chungnam National University) ;
  • Hong, Sung-June (Department of Radio & Information Communications Engineering, Chungnam National University) ;
  • Lim, Jun-Su (Department of Radio & Information Communications Engineering, Chungnam National University) ;
  • Kim, Dong-Wook (Department of Radio & Information Communications Engineering, Chungnam National University)
  • 김세일 (충남대학교 전파정보통신공학과) ;
  • 이민표 (충남대학교 전파정보통신공학과) ;
  • 홍성준 (충남대학교 전파정보통신공학과) ;
  • 임준수 (충남대학교 전파정보통신공학과) ;
  • 김동욱 (충남대학교 전파정보통신공학과)
  • Received : 2018.11.12
  • Accepted : 2018.12.25
  • Published : 2019.01.31

Abstract

In this paper, a Ku-band 50-W internally-matched power amplifier is designed and fabricated using a CGHV1J070D GaN HEMT from Wolfspeed. To obtain the same magnitudes and phases for the output signals of the unit transistor cells, which constitute a power transistor, a slit pattern and an asymmetric T-junction are used in the input and output matching circuits. The internally-matched power amplifier is fabricated on two different thin-film substrates with relative dielectric constants of 40 and 9.8, respectively, and is measured under pulsed conditions with a pulse period of $330{\mu}s$ and a duty cycle of 6%. The measured results show a maximum output power of 50~73 W, a drain efficiency of 35.4~46.4%, and a power gain of 4.5~6.5 dB from 16.2 to 16.8 GHz.

Keywords

GaN;HEMT;Power Amplifier;Internally-Matched;Ku-Band

JJPHCH_2019_v30n1_8_f0001.png 이미지

그림 1. Wolfspeed社의 CGHV1J070D Fig. 1. CGHV1J070D of Wolfspeed.

JJPHCH_2019_v30n1_8_f0002.png 이미지

그림 2. 최대 가용이득과 안정도 지수 k Fig. 2. Maximum available gain and stability factor k.

JJPHCH_2019_v30n1_8_f0003.png 이미지

그림 3. 소스-풀 및 로드-풀 시뮬레이션 결과 Fig. 3. Source-pull and load-pull simulation results.

JJPHCH_2019_v30n1_8_f0004.png 이미지

그림 4. 슬릿과 비대칭 T-junction이 적용된 정합 회로 Fig. 4. Matching circuit with a slit and an asymmetric T-junction.

JJPHCH_2019_v30n1_8_f0005.png 이미지

그림 5. 입출력 정합회로의 임피던스 궤적 Fig. 5. Impedance traces of input and output matching circuits.

JJPHCH_2019_v30n1_8_f0006.png 이미지

그림 6. 제작된 내부 정합 전력증폭기 Fig. 6. Fabricated internally-matched power amplifier.

JJPHCH_2019_v30n1_8_f0007.png 이미지

그림 7. S-파라미터 측정 및 시뮬레이션 결과(실선: 측정, 점선: 시뮬레이션) Fig. 7. Measured and simulated S-parameter results(solid line: measurement, dotted line: simulation).

JJPHCH_2019_v30n1_8_f0008.png 이미지

그림 8. 제작된 전력증폭기의 측정된 출력 전력 특성 Fig. 8. Measured output power performance of the fabri-cated power amplifier.

표 1. CGHV1J070D 소자 제원 Table 1. Device specifications of CGHV1J070D.

JJPHCH_2019_v30n1_8_t0001.png 이미지

Acknowledgement

Supported by : 충남대학교

References

  1. 이상홍, 김성일, 민병규, 임종원, 권용한, 남은수, "차세대 GaN 고주파 고출력 증폭기 기술 동향," 전자통신동향분석, 29(6), pp. 1-13, 2014년 12월. https://doi.org/10.22648/ETRI.2014.J.290601
  2. D. W. Kim, "An output matching technique for a GaN distributed power amplifier MMIC using tapered drain shunt capacitors," IEEE Microwave and Wireless Components Letters, vol. 25, no. 9, pp. 603-605, Sep. 2015. https://doi.org/10.1109/LMWC.2015.2451351
  3. 강현석, 이익준, 배경태, 김세일, 김동욱, "S-대역300 W급 GaN HEMT 고조파 튜닝 내부 정합 전력증폭기," 한국전자파학회논문집, 29(4), pp. 290-298, 2018년 4월.
  4. Wolfspeed. "GaN HEMT CGHV1J070D," 2017. Available: http://www.wolfspeed.com.
  5. K. Mori, J. Nishihara, H. Utsumi, A. Inoue, and M. Miyazaki, "X-band 14 W high efficiency internally-matched HFET," in 2008 IEEE MTT-S International Microwave Symposium Digest, Atlanta, GA, Jun. 2008, pp. 315-318.