- Volume 41 Issue 3
DOI QR Code
Collective laser-assisted bonding process for 3D TSV integration with NCP
- Braganca, Wagno Alves Junior (Department of Advanced Device Technology, University of Science and Technology) ;
- Eom, Yong-Sung (ICT Materials and Components Laboratory, ETRI) ;
- Jang, Keon-Soo (Department of Chemical and Materials Engineering (Polymer), The University of Suwon) ;
- Moon, Seok Hwan (ICT Materials and Components Laboratory, ETRI) ;
- Bae, Hyun-Cheol (ICT Materials and Components Laboratory, ETRI) ;
- Choi, Kwang-Seong (Department of Advanced Device Technology, University of Science and Technology)
- Received : 2018.04.30
- Accepted : 2018.10.08
- Published : 2019.06.03
Laser-assisted bonding (LAB) is an advanced technology in which a homogenized laser beam is selectively applied to a chip. Previous researches have demonstrated the feasibility of using a single-tier LAB process for 3D through-silicon via (TSV) integration with nonconductive paste (NCP), where each TSV die is bonded one at a time. A collective LAB process, where several TSV dies can be stacked simultaneously, is developed to improve the productivity while maintaining the reliability of the solder joints. A single-tier LAB process for 3D TSV integration with NCP is introduced for two different values of laser power, namely 100 W and 150 W. For the 100 W case, a maximum of three dies can be collectively stacked, whereas for the 150 W case, a total of six tiers can be simultaneously bonded. For the 100 W case, the intermetallic compound microstructure is a typical Cu-Sn phase system, whereas for the 150 W case, it is asymmetrical owing to a thermogradient across the solder joint. The collective LAB process can be realized through proper design of the bonding parameters such as laser power, time, and number of stacked dies.
Supported by : Korea Institute of Energy Technology Evaluation and Planning
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