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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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JSTS:Journal of Semiconductor Technology and Science
Journal Basic Information
Journal DOI :
The Institute of Electronics Engineers of Korea
Editor in Chief :
Volume & Issues
Volume 13, Issue 6 - Dec 2013
Volume 13, Issue 5 - Oct 2013
Volume 13, Issue 4 - Aug 2013
Volume 13, Issue 3 - Jun 2013
Volume 13, Issue 2 - Apr 2013
Volume 13, Issue 1 - Feb 2013
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Behavioral Current-Voltage Model with Intermediate States for Unipolar Resistive Memories
Kim, Young Su ; Min, Kyeong-Sik ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 539~545
DOI : 10.5573/JSTS.2013.13.6.539
In this paper, a behavioral current-voltage model with intermediate states is proposed for analog applications of unipolar resistive memories, where intermediate resistance values between SET and RESET state are used to store analog data. In this model, SET and RESET behaviors are unified into one equation by the blending function and the percentage volume fraction of each region is modeled by the Johnson-Mehl-Avrami (JMA) equation that can describe the time-dependent phase transformation of unipolar memory. The proposed model is verified by the measured results of
unipolar memory and tested by the SPECTRE circuit simulation with CMOS read and write circuits for unipolar resistive memories. With the proposed model, we also show that the behavioral model that combines the blending equation and JMA kinetics can universally describe not only unipolar memories but also bipolar ones. This universal behavioral model can be useful in practical applications, where various kinds of both unipolar and bipolar memories are being intensively studied, regardless of polarity of resistive memories.
Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics
Shin, Sunhae ; Kang, In Man ; Kim, Kyung Rok ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 546~550
DOI : 10.5573/JSTS.2013.13.6.546
We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over
at low operation voltage of 0.5 V in a single peak and valley current.
Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
Lee, Hyun Kook ; Choi, Woo Young ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 551~555
DOI : 10.5573/JSTS.2013.13.6.551
Linearity characteristics of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and
-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and
-only TFETs. It is because HG TFETs show higher transconductance (
) and current drivability than
-only TFETs and
less sensitive to gate voltage than high-k-only TFETs.
Advanced Circuit-Level Model of Magnetic Tunnel Junction-based Spin-Torque Oscillator with Perpendicular Anisotropy Field
Kim, Miryeon ; Lim, Hyein ; Ahn, Sora ; Lee, Seungjun ; Shin, Hyungsoon ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 556~561
DOI : 10.5573/JSTS.2013.13.6.556
Interest in spin-torque oscillators (STOs) has been increasing due to their potential use in communication devices. In particular the magnetic tunnel junction-based STO (MTJ-STO) with high perpendicular anisotropy is gaining attention since it can generate high output power. In this paper, a circuit-level model for an in-plane magnetized MTJ-STO with partial perpendicular anisotropy is proposed. The model includes the perpendicular torque and the shift field for more accurate modeling. The bias voltage dependence of perpendicular torque is represented as quadratic. The model is written in Verilog-A, and simulated using HSPICE simulator with a current-mirror circuit and a multi-stage wideband amplifier. The simulation results show the proposed model can accurately replicate the experimental data such that the power increases and the frequency decreases as the value of the perpendicular anisotropy gets close to the value of the demagnetizing field.
Magnetic Resonant Coupling Based Wireless Power Transfer System with In-Band Communication
Kim, Sun-Hee ; Lim, Yong-Seok ; Lee, Seung-Jun ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 562~568
DOI : 10.5573/JSTS.2013.13.6.562
This paper presents a design of a wireless power transfer system based on magnetic resonant coupling technology with in-band wireless communication. To increase the transmission distance and compensate for the change in the effective capacitance due to the varying distance, the proposed system used a loop antenna with a selectable capacitor array. Because the increased transmission distance enables multiple charging, we added a communication protocol operated at the same frequency band to manage a network and control power circuits. In order to achieve the efficient bandwidth in both power transfer mode and communication mode, the S-parameters of the loop antennas are adjusted by switching a series resistor. Our test results showed that the loop antenna achieved a high Q factor in power transfer mode and enough passband in communication mode.
Accurate Non-Quasi-Static Gate-Source Impedance Model of RF MOSFETs
Lee, Hyun-Jun ; Lee, Seonghearn ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 569~575
DOI : 10.5573/JSTS.2013.13.6.569
An improved non-quasi-static gate-source impedance model including a parallel RC block for short-channel MOSFETs is developed to simulate RF MOSFET input characteristics accurately in the wide range of high frequency. The non-quasi-static model parameters are accurately determined using the physical input equivalent circuit. This improved model results in much better agreements between the measured and modelled input impedance than a simple one with a non-quasi-static resistance up to 40GHz, verifying its accuracy.
Enhanced Photoresponse of Plasmonic Terahertz Wave Detector Based on Silicon Field Effect Transistors with Asymmetric Source and Drain Structures
Ryu, Min Woo ; Kim, Sung-Ho ; Kim, Kyung Rok ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 576~580
DOI : 10.5573/JSTS.2013.13.6.576
We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain structures as the promising plasmonic THz detectors.
Process Temperature Dependence of Al
Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells
Oh, Sung-Kwen ; Shin, Hong-Sik ; Jeong, Kwang-Seok ; Li, Meng ; Lee, Horyeong ; Han, Kyumin ; Lee, Yongwoo ; Lee, Ga-Won ; Lee, Hi-Deok ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 581~588
DOI : 10.5573/JSTS.2013.13.6.581
This paper presents a study of the process temperature dependence of
film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of
film maintained almost the same until
, but decreased from
film deposited at
was found to have the highest negative fixed oxide charge density (
) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA),
film deposited at
had the lowest slow and fast interface trap density. Actually,
film deposited at
showed the best passivation effects, that is, the highest excess carrier lifetime (
) and lowest surface recombination velocity (
) than other conditions. Therefore,
film deposited at
exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.
Measurement of Multi-Port S-Parameters using Four-Port Network Analyzer
Kim, Jongmin ; Luong, Duc Long ; Nah, Wansoo ; Kim, SoYoung ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 589~593
DOI : 10.5573/JSTS.2013.13.6.589
An efficient measurement methodology is proposed to construct the scattering parameters of a multi-port device using a four-port vector network analyzer (VNA) without the external un-terminated ports. By using the four-port VNA, the reflected waves from the un-terminated ports could be minimized. The proposed method significantly enhances the accuracy of the S-parameters with less number of measurements compared to the results of classical renormalization technique which uses two-port VNA. The proposed method is validated from the measured data with the coupled 8-port micro-strip lines.
Analytical Eye-Diagram Determination for the Efficient and Accurate Signal Integrity Verification of Coupled Interconnect Lines
Lee, Minji ; Kim, Dongchul ; Eo, Yungseon ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 594~607
DOI : 10.5573/JSTS.2013.13.6.594
A new efficient analytical eye-diagram determination technique for coupled interconnect lines is presented. Two coupled lines are decoupled into isolated eigen modes; bit blocks for coupled lines, which are defined as a block of consecutive bits, are then represented with decoupled modes. The crosstalk effects within the bit blocks are taken into account. Thereby, the crucial input bit patterns for the worst case eye-diagram determination are modeled mathematically, including inter-symbol interference (ISI). The proposed technique shows excellent agreement with the SPICE-based simulation. Furthermore, it is very computation-time-efficient in the order of magnitude, compared with the SPICE simulation, which requires numerous pseudo-random bit sequence (PRBS) input signals.
Adaptive Sampling for ECG Detection Based on Compression Dictionary
Yuan, Zhongyun ; Kim, Jong Hak ; Cho, Jun Dong ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 608~616
DOI : 10.5573/JSTS.2013.13.6.608
This paper presents an adaptive sampling method for electrocardiogram (ECG) signal detection. First, by employing the strings matching process with compression dictionary, we recognize each segment of ECG with different characteristics. Then, based on the non-uniform sampling strategy, the sampling rate is determined adaptively. As the results of simulation indicated, our approach reconstructed the ECG signal at an optimized sampling rate with the guarantee of ECG integrity. Compared with the existing adaptive sampling technique, our approach acquires an ECG signal at a 30% lower sampling rate. Finally, the experiment exhibits its superiority in terms of energy efficiency and memory capacity performance.
Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire
Oh, Seung Kyu ; Song, Chi Gyun ; Jang, Taehoon ; Kwak, Joon Seop ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 617~621
DOI : 10.5573/JSTS.2013.13.6.617
This study examined the effect of electron-beam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from
, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the AlGaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.
Performance Investigation of Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET for Low Volatge Digital Applications
Kumari, Vandana ; Saxena, Manoj ; Gupta, R.S. ; Gupta, Mridula ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 622~634
DOI : 10.5573/JSTS.2013.13.6.622
The circuit level implementation of nanoscale Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET has been investigated and compared with the other conventional devices i.e. Insulated Shallow Extension (ISE) and Silicon On Nothing (SON) using the ATLAS 3D device simulator. It can be observed that ISE-SON based inverter shows better performance in terms of Voltage Transfer Characteristics, noise margin, switching current, inverter gain and propagation delay. The reliability issues of the various devices in terms of supply voltage, temperature and channel length variation has also been studied in the present work. Logic circuits (such as NAND and NOR gate) and ring oscillator are also implemented using different architectures to illustrate the capabilities of ISE-SON architecture for high speed logic circuits as compared to other devices. Results also illustrates that ISE-SON is much more temperature resistant than SON and ISE MOSFET. Hence, ISE-SON enables more aggressive device scaling for low-voltage applications.
An Overview Of Nanonet Based Dye-Sensitized Solar Cell (DSSC) In Solar Cloth
Othman, Mohd Azlishah ; Ahmad, Badrul Hisham ; Amat, Noor Faridah ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 635~646
DOI : 10.5573/JSTS.2013.13.6.635
This technical paper contains the information of the Dye-Sensitized Solar Cells (DSSC) working principal where diffusion mechanism acts as electron transport to absorb the sunlight energy to generate the electrical energy. DSSC is photo electrochemical cell that implements the application of photosynthesis process. The performance of electron transport in DSSC has been reviewed in order to enhance the performance and efficiency of electron transport. The improvement of the electron transport also discussed in this paper.
A Study of SCEs and Analog FOMs in GS-DG-MOSFET with Lateral Asymmetric Channel Doping
Sahu, P.K. ; Mohapatra, S.K. ; Pradhan, K.P. ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 647~654
DOI : 10.5573/JSTS.2013.13.6.647
The design and analysis of analog circuit application on CMOS technology are a challenge in deep sub-micrometer process. This paper is a study on the performance value of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Gate Stack and the channel engineering Single Halo (SH), Double Halo (DH). Four different structures have been analysed keeping channel length constant. The short channel parameters and different sub-threshold analog figures of merit (FOMs) are analysed. This work extensively provides the device structures which may be applicable for high speed switching and low power consumption application.
Dependence of the 1/f Noise Characteristics of CMOSFETs on Body Bias in Sub-threshold and Strong Inversion Regions
Kwon, Sung-Kyu ; Kwon, Hyuk-Min ; Kwak, Ho-Young ; Jang, Jae-Hyung ; Shin, Jong-Kwan ; Hwang, Seon-Man ; Sung, Seung-Yong ; Lee, Ga-Won ; Lee, Song-Jae ; Han, In-Shik ; Chung, Yi-Sun ; Lee, Jung-Hwan ; Lee, Hi-Deok ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 655~661
DOI : 10.5573/JSTS.2013.13.6.655
In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise,
showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and PMOSFET, and NMOSFET showed stronger dependence than PMOSFET on the body bias. On the contrary, both of NMOSFET and PMOSFET do not exhibit the dependence of
on body bias in strong inversion region, although the noise mechanisms of two MOSFETs are different from each other.
A Study on the Fluorine Effect of Direct Contact Process in High-Doped Boron Phosphorus Silicate Glass (BPSG)
Kim, Hyung-Joon ; Choi, Pyungho ; Kim, Kwangsoo ; Choi, Byoungdeog ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 662~667
DOI : 10.5573/JSTS.2013.13.6.662
The effect of fluorine ions, which can be reacted with boron in high-doped BPSG, is investigated on the contact sidewall wiggling profile in semiconductor process. In the semiconductor device, there are many contacts on
source and drain region. However these types of wiggling profile is only observed at the
contact region. As a result, we find that the type of plug implantation dopant can affect the sidewall wiggling profile of contact. By optimizing the proper fluorine gas flow rate, both the straight sidewall profile and the desired electrical characteristics can be obtained. In this paper, we propose a fundamental approach to improve the contact sidewall wiggling profile phenomena, which mostly appear in high-doped BPSG on next-generation DRAM products.
Selective Chemical Wet Etching of Si
Kil, Yeon-Ho ; Yang, Jong-Han ; Kang, Sukil ; Jeong, Tae Soo ; Kim, Taek Sung ; Shim, Kyu-Hwan ;
JSTS:Journal of Semiconductor Technology and Science, volume 13, issue 6, 2013, Pages 668~675
DOI : 10.5573/JSTS.2013.13.6.668
We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp
(30%) and 3 vp
(99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of
layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.