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JSTS:Journal of Semiconductor Technology and Science
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Journal Basic Information
pISSN :
1598-1657 
eISSN :
2233-4866 
Journal DOI :
10.5573/JSTS 
Frequency :
Others 
Editor in Chief :
move
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  • Growth of AlN/GaN HEMT structure Using Indium-surfactant
  • Kim, Jeong-Gil ; Won, Chul-Ho ; Kim, Do-Kywn ; Jo, Young-Woo ; Lee, Jun-Hyeok ; Kim, Yong-Tae ; Cristoloveanu, Sorin ; Lee, Jung-Hee ;
  • JSTS:Journal of Semiconductor Technology and Science, volume 15, issue 5, 2015, Pages 490~496
  • DOI : 10.5573/JSTS.2015.15.5.490
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