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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
JSTS:Journal of Semiconductor Technology and Science
Journal Basic Information
Journal DOI :
The Institute of Electronics Engineers of Korea
Editor in Chief :
Volume & Issues
Volume 2, Issue 4 - Dec 2002
Volume 2, Issue 3 - Sep 2002
Volume 2, Issue 2 - Jun 2002
Volume 2, Issue 1 - Mar 2002
Selecting the target year
A New Type of High Bandwidth RF MEMS Switch - Toggle Switch
Bernd Schauwecker ; Karl M. Strohm ; Winfried Simon ; Jan Mehner ; Luy, Johann-Friedrich ;
JSTS:Journal of Semiconductor Technology and Science, volume 2, issue 4, 2002, Pages 237~245
A new type of RF MEMS switch for low voltage actuation, high broadband application and high power capability is presented. Mechanical and electromagnetic simulations of this new RF MEMS switch type are shown and the fabrication process and measurement results are given. The switching element consists of a cantilever which is fixed by a suspension spring to the ground of the coplanar line. The closing voltage is 16V. The switches exhibit low insertion loss (<0.85dB@30GHz) with good isolation (>22dB@30GHz).
Piezoelectric PZT Cantilever Array Integrated with Piezoresistor for High Speed Operation and Calibration of Atomic Force Microscopy
Nam, Hyo-Jin ; Kim, Young-Sik ; Cho, Seong-Moon ; Lee, Caroline-Sunyong ; Bu, Jong-Uk ; Hong, Jae-Wan ;
JSTS:Journal of Semiconductor Technology and Science, volume 2, issue 4, 2002, Pages 246~252
Two kinds of PZT cantilevers integrated with a piezoresistor have been newly designed, fabricated, and characterized for high speed AFM. In first cantilever, a piezoresistor is used to sense atomic force acting on tip, while in second cantilever, a piezoresistor is integrated to calibrate hysteresis and creep phenomena of the PZT cantilever. The fabricated PZT cantilevers provide high tip displacement of
and high resonant frequency of 73 KHz. A new cantilever structure has been designed to prevent electrical coupling between sensor and PZT actuator and the proposed cantilever shows 5 times lower coupling voltage than that of the previous cantilever. The fabricated PZT cantilever shows a crisp scanned image at 1mm/sec, while the conventional piezo-tube scanner shows blurred image even at
. The non-linear properties of the PZT actuator are also well calibrated using the piezoresistive sensor for calibration.
A Study on the Passive Microvalve Applicable to Drainage Device for Glaucoma
Sim, Tae-Seok ; Kim, Yong-Kweon ;
JSTS:Journal of Semiconductor Technology and Science, volume 2, issue 4, 2002, Pages 253~258
This paper reports the design, modeling, fabrication and measurement of passive microvalves, which are applicable to glaucoma implants. The proposed microvalves were designed using fluidic theory. The microvalves consisted of microchannels and chambers. The microchannels had a constant fluidic resistance generating a pressure difference. Six kinds of microvalves were designed using fluidic equations for laminar flow and fabricated to examine the influences of chamber size, channel length and the shape of channel cross section. The pressure difference between the designed microvalve and the fabricated microvalve was measured to be less than 4%.
3D Lithography using X-ray Exposure Devices Integrated with Electrostatic and Electrothermal Actuators
Lee, Kwang-Cheol ; Lee, Seung S. ;
JSTS:Journal of Semiconductor Technology and Science, volume 2, issue 4, 2002, Pages 259~267
We present a novel 3D fabrication method with single X-ray process utilizing an X-ray mask in which a micro-actuator is integrated. An X-ray absorber is electroplated on the shuttle mass driven by the integrated micro-actuator during deep X-ray exposures. 3D microstructures are revealed by development kinetics and modulated in-depth dose distribution in resist, usually PMMA. Fabrication of X-ray masks with integrated electrothermal xy-stage and electrostatic actuator is presented along with discussions on PMMA development characteristics. Both devices use
-thick overhanging single crystal Si as a structural material and fabricated using deep reactive ion etching of silicon-on-insulator wafer, phosphorous diffusion, gold electroplating, and bulk micromachining process. In electrostatic devices,
gold absorber on
Si shuttle mass is supported by
, 1-mm-long suspension beams and oscillated by comb electrodes during X-ray exposures. In electrothermal devices, gold absorber on 1.42 mm diameter shuttle mass is oscillated in x and y directions sequentially by thermal expansion caused by joule heating of the corresponding bent beam actuators. The fundamental frequency and amplitude of the electrostatic devices are around 3.6 kHz and
, respectively, for a dc bias of 100 V and an ac bias of 20 VP-P (peak-peak). Displacements in x and y directions of the electrothermal devices are both around
at 742 mW input power. S-shaped and conical shaped PMMA microstructures are demonstrated through X-ray experiments with the fabricated devices.
Fabrication of 3D Microstructures with Single uv Lithography Step
Han, Man-Hee ; Lee, Woon-Seob ; Lee, Sung-Keun ; Lee, Seung S. ;
JSTS:Journal of Semiconductor Technology and Science, volume 2, issue 4, 2002, Pages 268~272
This paper presents a novel microfabrication technology of 3D microstructures with inclined/rotated UV lithography using negative photoresist, SU-8. In some cases, reflected UV as well as incident UV is used to form microstructures. Various 3D microstructures are simply fabricated such as embedded channels, bridges, V-grooves, truncated cones, and so on.
The Active Dissolved Wafer Process (ADWP) for Integrating single Crystal Si MEMS with CMOS Circuits
Karl J. Ma ; Yogesh B. Glanchandani ; Khalil Najafi ;
JSTS:Journal of Semiconductor Technology and Science, volume 2, issue 4, 2002, Pages 273~279
This paper presents a fabrication technology for the integration of single crystal Si microstructures with on-chip circuitry. It is a dissolved wafer technique that combines an electro-chemical etch-stop for the protection of circuitry with an impurity-based etch-stop for the microstructures, both of which are defined in an n-epi layer on a p-type Si wafer. A CMOS op. amp. has been integrated with
Si accelerometers using this process. It has a gain of 68 dB and an output swing within 0.2 V of its power supplies, unaffected by the wafer dissolution. The accelerometers have
thick suspension beams and
thick proof masses. The structural and electrical integrity of the fabricated devices demonstrates the success of the fabrication process. A variety of lead transfer methods are shown, and process details are discussed.
Fabrication Uncertainty and Noise Issues in High-Precision MEMS Actuators and Sensors
Cho, Young-Ho ; Lee, Won-Chul ; Han, Ki-Ho ;
JSTS:Journal of Semiconductor Technology and Science, volume 2, issue 4, 2002, Pages 280~287
We present technical issues involved in the development of actuators and sensors for applications to high-precision Micro Electro Mechanical System (MEMS). The technical issues include fabrication uncertainty and noise disturbance, causing major difficulties for MEMS to achieve high-precision actuation and detection functions. For nano-precision actuators, we solve the fabrication instability and electrical noise problems using digital actuators coupled with nonlinear mechanical modulators. For the high-precision capacitive sensors, we present a branched finger electrodes using high-amplitude anti-phase sensing signals. We also demonstrate the potential applications of the nanoactuators and nanodetectors to high-precision positioning MEMS.
A 32 by 32 Electroplated Metallic Micromirror Array
Lee, Jeong-Bong ;
JSTS:Journal of Semiconductor Technology and Science, volume 2, issue 4, 2002, Pages 288~294
This paper presents the design, fabrication and characterization of a 32 by 32 electroplated micromirror array on a glass, a low cost substrate. Approaches taken in this work for the fabrication of micromachined mirror arrays include a line addressing scheme, a seamless array design for high fill factor, planarization techniques of polymeric interlayers, a high yield methodology for the removal of sacrificial polymeric interlayers, and low temperature and chemically safe fabrication techniques. The micromirror is fabricated by aluminum and the size of a single micromirror is 200
. Static deflection test of the micro-mirror has been carried out and pull-in voltage of 44V and releasing voltage of 30V was found.
Solenoid Type 3-D Passives(Inductors and Trans-formers) For Advanced Mobile Telecommunication Systems
Park, Jae Y. ; Jong U. Bu ;
JSTS:Journal of Semiconductor Technology and Science, volume 2, issue 4, 2002, Pages 295~301
In this paper, solenoid-type 3-D passives (inductors and transformers) have been designed, fabricated, and characterized by using electroplating techniques, wire bonding techniques, multi-layer thick photoresist, and low temperature processes which are compatible with semiconductor circuitry fabrication. Two different fabrication approaches are performed to develop the solenoid-type 3-D passives and relationship of performance characteristics and geometry is also deeply investigated such as windings, cross-sectional area of core, spacing between windings, and turn ratio. Fully integrated inductor has a quality factor of 31 at 6 GHz, an inductance of 2.7 nH, and a self resonant frequency of 15.8 GHz. Bonded wire inductor has a quality factor of 120, an inductance of 20 nH, and a self resonant frequency of 8 GHz. Integrated transformers with turn ratios of 1:1 and n:l have the minimum insertion loss of about 0.6 dB and the wide bandwidth of a few GHz.