Go to the main menu
Skip to content
Go to bottom
REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
JSTS:Journal of Semiconductor Technology and Science
Journal Basic Information
Journal DOI :
The Institute of Electronics Engineers of Korea
Editor in Chief :
Volume & Issues
Volume 6, Issue 4 - Dec 2006
Volume 6, Issue 3 - Sep 2006
Volume 6, Issue 2 - Jun 2006
Volume 6, Issue 1 - Mar 2006
Selecting the target year
Optical Properties of a ZnO-MgZnO Quantum-Well
Ahn, Do-Yeol ; Park, Seoung-Hwan ;
JSTS:Journal of Semiconductor Technology and Science, volume 6, issue 3, 2006, Pages 125~130
The optical gain and the luminescence of a ZnO quantum well with MgZnO barriers is studied theoretically. We calculated the non-Markovian optical gain and the luminescence for the strained-layer wurtzite quantum well taking into account of the excitonic effects. It is predicted that both optical gain and luminescence are enhanced for the ZnO quantum well when compared with those of InGaN-AlGaN quantum well structure due to the significant reduction of the piezoelectric effects in the ZnO-MgZnO systems.
Molecular Beam Epitaxy of InAs/AlSb HFET's on Si and GaAs Substrates
Oh, Jae-Eung ; Kim, Mun-Deok ;
JSTS:Journal of Semiconductor Technology and Science, volume 6, issue 3, 2006, Pages 131~135
High electron mobility transistors with InAs channels and antimonide barriers were grown on Si and GaAs substrates by means of molecular beam epitaxy. While direct growth of Sb materials on Si substrate generates disordered and coalescences 3-D growth, smooth and mirror-like 2D growth can be repeatedly obtained by inserting AlSb QD layers between them. Room-temperature electron mobilities of over 10,000
can be routinely obtained on Si and GaAs substrates, respectively, after optimizing the buffer structure as well as maintaining InSb-like interface.
Manufacturing of GaAs MMICs for Wireless Communications Applications
Ho, Wu-Jing ; Liu, Joe ; Chou, Hengchang ; Wu, Chan Shin ; Tsai, Tsung Chi ; Chang, Wei Der ; Chou, Frank ; Wang, Yu-Chi ;
JSTS:Journal of Semiconductor Technology and Science, volume 6, issue 3, 2006, Pages 136~145
Two major processing technologies of GaAs HBT and pHEMT have been released in production at Win Semiconductors corp. to address the strong demands of power amplifiers and switches for both handset and WLAN communications markets. Excellent performance with low processing cost and die shrinkage features is reported from the manufactured MMICs. With the stringent tighter manufacturing quality control WIN has successfully become one of the major pure open foundry house to serve the communication industries. The advancing of both technologies to include E/D-pHEMTs and BiHEMTs likes for multifunctional integration of PA, LNA, switch and logics is also highlighted.
Beyond-CMOS: Impact of Side-Recess Spacing on the Logic Performance of 50 nm
Kim, Dae-Hyun ; del Alamo, Jesus A. ; Lee, Jae-Hak ; Seo, Kwang-Seok ;
JSTS:Journal of Semiconductor Technology and Science, volume 6, issue 3, 2006, Pages 146~153
We have been investigating InGaAs HEMTs as a future high-speed and low-power logic technology for beyond CMOS applications. In this work, we have experimentally studied the role of the side-recess spacing
on the logic performance of 50 nm
As HEMTs. We have found that
has a large influence on the electrostatic integrity (or short channel effects), gate leakage current, gate-drain capacitance, and source and drain resistance of the device. For our device design, an optimum value of
of 150 nm is found. 50 nm
HEMTs with this value of
ratios in excess of
, subthreshold slopes smaller than 90 mV/dec, and logic gate delays of about 1.3 ps at a
of 0.5 V. In spite of the fact that these devices are not optimized for logic, these values are comparable to state-of-the-art MOSFETs with similar gate lengths. Our work confirms that in the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs FETs hold considerable promise.
High-Speed Digital/Analog NDR ICs Based on InP RTD/HBT Technology
Kim, Cheol-Ho ; Jeong, Yong-Sik ; Kim, Tae-Ho ; Choi, Sun-Kyu ; Yang, Kyoung-Hoon ;
JSTS:Journal of Semiconductor Technology and Science, volume 6, issue 3, 2006, Pages 154~161
This paper describes the new types of ngative differential resistance (NDR) IC applications which use a monolithic quantum-effect device technology based on the RTD/HBT heterostructure design. As a digital IC, a low-power/high-speed MOBILE (MOnostable-BIstable transition Logic Element)-based D-flip flop IC operating in a non-return-to-zero (NRZ) mode is proposed and developed. The fabricated NRZ MOBILE D-flip flop shows high speed operation up to 34 Gb/s which is the highest speed to our knowledge as a MOBILE NRZ D-flip flop, implemented by the RTD/HBT technology. As an analog IC, a 14.75 GHz RTD/HBT differential-mode voltage-controlled oscillator (VCO) with extremely low power consumption and good phase noise characteristics is designed and fabricated. The VCO shows the low dc power consumption of 0.62 mW and good F.O.M of -185 dBc/Hz. Moreover, a high-speed CML-type multi-functional logic, which operates different logic function such as inverter, NAND, NOR, AND and OR in a circuit, is proposed and designed. The operation of the proposed CML-type multi-functional logic gate is simulated up to 30 Gb/s. These results indicate the potential of the RTD based ICs for high speed digital/analog applications.
InGaAs Nano-HEMT Devices for Millimeter-wave MMICs
Kim, Sung-Won ; Kim, Dae-Hyun ; Yeon, Seong-Jin ; Seo, Kwang-Seok ;
JSTS:Journal of Semiconductor Technology and Science, volume 6, issue 3, 2006, Pages 162~168
To fabricate nanometer scale InGaAs HEMTs, we have successfully developed various novel nano-patterning techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30nm
HEMTs with excellent
of 426GHz. Based on nanometer scale InGaAs HEMT technology, several high performance millimeter-wave integrated circuits have been successfully fabricated, including 77GHz MMIC chipsets for automotive radar application.
Vertical Integration of MM-wave MMIC's and MEMS Antennas
Kwon, Young-Woo ; Kim, Yong-Kweon ; Lee, Sang-Hyo ; Kim, Jung-Mu ;
JSTS:Journal of Semiconductor Technology and Science, volume 6, issue 3, 2006, Pages 169~174
In this work, we demonstrate a novel compact mechanical beam steering transmitter based on a direct vertical integration of a 2-D MEMS-based mechanical beam steering antenna with a VCO on a single silicon platform. By eliminating the long feed lines and waveguide metal blocks, the radiation pattern has been improved vastly, resulting in an almost ideal pattern at every scan angle. The losses incurred by the feed lines and phase shifters are also eliminated, which allows the transmitter to be implemented using only a single VCO. The system complexity has been greatly reduced with a total module size of only 1.5 cm
0.4 cm. This work demonstrates that RF MEMS can be a key enabling technology for high-level integration.
Wide Band-gap FETs for High Power Amplifiers
Burm, Jin-Wook ; Kim, Jae-Kwon ;
JSTS:Journal of Semiconductor Technology and Science, volume 6, issue 3, 2006, Pages 175~181
Wide band-gap semiconductor electron devices have made great progresses to produce very high power amplifiers for various wireless standards. The advantages of wide band-gap electronic devices and their progresses are summarized in this paper.
A Fast and Robust Approach for Modeling of Nanoscale Compound Semiconductors for High Speed Digital Applications
Ahlawat, Anil ; Pandey, Manoj ; Pandey, Sujata ;
JSTS:Journal of Semiconductor Technology and Science, volume 6, issue 3, 2006, Pages 182~188
An artificial neural network model for the microwave characteristics of an InGaAs/InP hemt for 70 nm gate length has been developed. The small-signal microwave parameters have been evaluated to determine the transconductance and drain-conductance. We have further investigated the frequency characteristics of the device. The neural network training have been done using the three layer architecture using Levenberg-Marqaurdt Backpropagation algorithm. The results have been compared with the experimental data, which shows a close agreement and the validity of our proposed model.
Analytical Model for Metal Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) for its High Frequency and High Power Applications
Gupta, Ritesh ; Aggarwal, Sandeep Kr ; Gupta, Mridula ; Gupta, R.S. ;
JSTS:Journal of Semiconductor Technology and Science, volume 6, issue 3, 2006, Pages 189~198
A new analytical model has been proposed for predicting the sheet carrier density of Metal insulator Semiconductor High Electron Mobility Transistor (MISHEMT). The model takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to consider the quantum effects and to validate it from subthreshold region to high conduction region. Then model has been formulated in such a way that it is applicable to MESFET/HEMT/MISFET with few adjustable parameters. The model can also be used to evaluate the characteristics for different gate insulator geometries like T-gate etc. The model has been extended to forecast the drain current, conductance and high frequency performance. The results so obtained from the analysis show excellent agreement with previous models and simulated results that proves the validity of our model.
Growth and Characteristics of Near-UV LED Structures on Wet-etched Patterned Sapphire Substrate
Cheong, Hung-Seob ; Hong, Chang-Hee ;
JSTS:Journal of Semiconductor Technology and Science, volume 6, issue 3, 2006, Pages 199~205
Patterned sapphire substrates (PSS) were fabricated by a simple wet etching process with
stripe masks and a mixed solution of
. GaN layers were epitaxially grown on the PSS under the optimized 2-step growth condition of metalorganic vapor deposition. During the 1st growth step, GaN layers with triangular cross sections were grown on the selected area of the surface of the PSS, and in the 2nd growth step, the GaN layers were laterally grown and coalesced with neighboring GaN layers. The density of threading dislocations on the surface of the coalesced GaN layer was
over the entire region. The epitaxial structure of near-UV light emitting diode (LED) was grown over the GaN layers on the PSS. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the PSS were remarkably increased when compared to the conventional LED structure grown on the flat sapphire substrate. The reduction in TD density and the decrease in the number of times of total internal reflections of the light flux are mainly attributed due to high level of scattering on the PSS.
Analytical Thermal Noise Model of Deep-submicron MOSFETs
Shin, Hyung-Cheol ; Kim, Se-Young ; Jeon, Jong-Wook ;
JSTS:Journal of Semiconductor Technology and Science, volume 6, issue 3, 2006, Pages 206~209
This paper presents an analytical noise model for the drain thermal noise, the induced gate noise, and their correlation coefficient in deep-submicron MOSFETs, which is valid in both linear region and saturation region. The impedance field method was used to calculate the external drain thermal noise current. The effect of channel length modulation was included in the analytical equation. The noise behavior of MOSFETs with decreasing channel length was successfully predicted from our model.
Static I-V Characteristics of Optically Controlled GaAs MESFET's with Emphasis on Substrate-induced Effects
Murty, Neti V.L. Narasimha ; Jit, S. ;
JSTS:Journal of Semiconductor Technology and Science, volume 6, issue 3, 2006, Pages 210~224
A new analytical model for the static I-V characteristics of GaAs MESFET’s under optically controlled conditions in both linear and saturation region is presented in this paper. The novelty of the model lies in characterizing both photovoltaic (external, internal) and photoconductive effects. Deep level traps in the semi insulating GaAs substrate are also included in this model. Finally, effect of backgate voltage on I-V characteristics is explained analytically for the first time in literature. Small signal parameters of GaAs MESFET are derived under both dark and illuminated conditions. Some of the results are compared with reported experimental results to show the validity of the proposed model. Since accurate dc modeling is the key to accurate ac modeling, this model is very useful in the designing of photonic MMIC’s and OEIC’s using GaAs MESFET.