A novel Helmholtz coil inductively coupled plasma(H-ICP) etcher is proposed and characterized for deep nano-scale CMOS technology. Various hardware tests are performed while varying key parameters such as distance between the top and bottom coils, the distance between the chamber ceiling and the wafer, and the chamber height in order to determine the optimal design of the chamber and optimal process conditions. The uniformity was significantly improved by applying the optimum conditions. The plasma density obtained with the H-ICP source was about , and the electron temperature was about 2-3 eV. The etching selectivity for the poly-silicon gate versus the ultra-thin gate oxide was 482:1 at 10 sccm of . The proposed H-ICP was successfully applied to form multiple 60-nm poly-silicon gate layers.

The authors fabricated a nanopatterned surface on a GaN thin film deposited on a sapphire substrate and used that as an epitaxial wafer on which to grow an InGaN/GaN multi-quantum well structure with metal-organic chemical vapor deposition. The deposited GaN epitaxial surface has a two-dimensional photonic crystal structure with a hexagonal lattice of 230 nm. The grown structure on the nano-surface shows a Raman shift of the transverse optical phonon mode to , which implies a compressive stress of 0.5 GPa. However, the regrown thin film without the nano-surface shows a free standing mode of , implying no stress. The nanohole surface better preserves the strain energy for pseudo-morphic crystal growth than does a flat plane.

A simulation study of a 10-bit two-stage DAC was done by using a conventional current switch cell. The DAC adopts the segmented architecture in order to reduce the circuit complexity and the die area. The 10-bit CMOS DAC was designed in 2 blocks, a unary cell matrix for 6 MSBs and a binary weighted array for 4 LSBs, for fabrication in a 0.35- CMOS process. To cancel the accumulation of errors in each current cell, a symmetrical switching sequence is applied in the unary cell matrix for 6 MSBs. To ensure high-speed operation, a decoding circuit with one stage latch and a cascode current source were developed. Simulations show that the maximum power consumption of the 10-bit DAC is 74 mW with a sampling frequency of 100 MHz.

Barium strontium calcium titanate powders were prepared with the sol-gel method. Ferroelectric (BSCT) thick films were fabricated by the screen-printing method on alumina substrate. Then we investigated the structural and dielectric properties of the BSCT thick films at different sintering temperatures. The thermal analysis showed that the BSCT polycrystalline perovskite phase formed at around . The X-ray diffraction analysis showed a cubic perovskite structure with no second phase present in all of the BSCT thick films. The average grain size and the thickness of the specimens sintered at were about and , respectively. The relative dielectric constant increased and the dielectric loss decreased as the sintering temperature was increased; for BSCT thick films sintered at the values of the dielectric constant and the dielectric loss were 5641 and 0.4%, respectively, at 1 kHz.

In this paper we develop a method to observe faults in semiconductor devices and transmission lines by calculating the variation of the reflection function in a dielectric microstrip line that has an open-ended termination containing an optically induced plasma region. It is analyzed with the assumption that the plasma is distributed homogeneously in laser illumination. With the non linear material of degradation, the concentration of the carrier in the part of the material has changed. Since the input wave has produced the phenomenon of reflection, the input signal to the open-ended microstrip lines can be observed on reflection to identify the location of the fault. The characteristic impedances resulting from the presence of plasma are evaluated by the transmission line model. The variation of the reflection wave in the microwave system has been calculated by using an equivalent circuit model. The transient response has been also evaluated theoretically for changing the phase of the variation in the reflection. The variation of characteristic response in differentially localized has been also evaluated analytically.

The electrical stability of ZnO: Al thin films deposited on glass substrate by the RF magnetron sputtering method have been modified by a hydrogen annealing treatment and protection layer. AZO thin films were deposited at room temperature and different RF powers of 50, 100, 150, and 200 W to optimize the AZO film growth condition. The lowest value of resistivity of was obtained at 2 mtorr, room temperature, and a power level of 150 W. Then, the AZO thin films were annealed at for 1 h in hydrogen ambient. The minimum resistivity obtained was as-annealed at . The electrical properties were enhanced by the hydrogen annealing treatment. After a 72 h damp-heat treatment in harsh conditions of a water steam at for four representative samples, a degradation of electrical properties was observed. The sample of hydrogen-annealed AZO thin films with protection layer showed a slight degradation ratio(17%) of electrical properties and a preferable transmittance of 90%. The electrical stability of AZO thin films had been modified by hydrogen annealing treatment and protection layer.

YBCO-coated conductors, called "second-generation wires," show a remarkably greater increase in the amount or speed of their resistance than BSCCO wires when a quench occurs. This is probably because of the specific resistance at their stabilizer layer, which also affects their voltage grade. YBCO coated conductors with copper as a stabilizer layer have a voltage grade of 1.5-2 V/cm, and those with stainless steel as a stabilizer layer have a voltage grade of about 0.5-0.6 V/cm. The voltage grade of YBCO coated conductors is important in selecting and applying superconducting wires to power instruments later. In this study, two kinds of YBCO-coated conductors with different stabilizer layers and one kind of BSCCO wire were prepared. Among them, based on the YBCO coated conductors that had a stainless steel stabilizer layer with a low voltage grade, five kinds of experimental samples for joining were prepared with the remaining two kinds of wires. Using the prepared samples, the current application properties and the resistance increase in the flux-flow and the quench states of the single wire and the joined wires were compared.

To manufacture YBCO-coated conductors as superconducting fault current limiters, it is important to conduct researches on their durability. To test their durability, it is necessary to investigate their properties before and after the quench in more severe conditions than in general operating conditions. In this study, their voltage-current and resistance properties were measured before and after a fault current was repetitively applied to them. For the applied voltage, the voltage grades of the YBCO coated conductors were considered. The current amplitude was controlled using protective resistance on an experimental track, and the time and number of applications were fixed to produce the quench occurrence at the fault angles of , , and . The operating conditions of the YBCO coated conductors as the main components of superconducting fault current limiters were determined using their voltage properties. The voltage properties of the YBCO coated conductors that were analyzed in this research will be used as important data for their practical application to superconducting fault current limiters.