The electrical stability of ZnO: Al thin films deposited on glass substrate by the RF magnetron sputtering method have been modified by a hydrogen annealing treatment and

protection layer. AZO thin films were deposited at room temperature and different RF powers of 50, 100, 150, and 200 W to optimize the AZO film growth condition. The lowest value of resistivity of

was obtained at 2 mtorr, room temperature, and a power level of 150 W. Then, the AZO thin films were annealed at

for 1 h in hydrogen ambient. The minimum resistivity obtained was

as-annealed at

. The electrical properties were enhanced by the hydrogen annealing treatment. After a 72 h damp-heat treatment in harsh conditions of a water steam at

for four representative samples, a degradation of electrical properties was observed. The sample of hydrogen-annealed AZO thin films with

protection layer showed a slight degradation ratio(17%) of electrical properties and a preferable transmittance of 90%. The electrical stability of AZO thin films had been modified by hydrogen annealing treatment and

protection layer.