Microstructural origins of leakage current and physical degradation during operation in product-quality AlGaN/GaN high electron mobility transistor (HEMT) devices were investigated using photon emission microscopy (PEM) and transmission electron microscopy (TEM). AlGaN/GaN HEMTs were fabricated with metal organic chemical vapor deposition on semi-insulating SiC substrates. Photon emission irregularity, which is indicative of gate leakage current, was measured by PEM. Site specific TEM analysis assisted by a focused ion beam revealed the presence of threading dislocations in the channel below the gate at the position showing strong photon emissions. Observation of electrically degraded devices after life tests revealed crack/pit shaped defects next to the drain in the top AlGaN layer. The morphology of the defects was three-dimensionally investigated via electron tomography.

Polymer-assisted deposition is a chemical solution route to high quality thin films. In this process, the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of crack-free and uniform films after thermal treatment. We review our recent effort to epitaxially grow metal-nitride thin films, such as hexagonal GaN, cubic TiN, AlN, NbN, and VN, mixed-nitride , ternary nitrides tetragonal , , and , hexagonal , and nanocomposite TiN-.

In this paper, we investigate the quality difference of SiC crystals grown by a conventional physical vapor transport method using various SiC powders. While the growth rate was revealed to be dependent upon the particle size of the SiC powder, the growth rate of SiC bulk crystals grown using SiC powder with a smaller particle size (20 nm) was definitely higher than those using lager particle sizes with and , respectively. All grown 2 inch SiC single crystals were proven to be the polytype of 6H-SiC and the carrier concentration levels of about were determined from Hall measurements. It was revealed that the particle size and process method of SiC powder played an important role in obtaining a good quality, high growth rate, and to reduce growth temperature.

The operation principle of a traveling wave rotary type ultrasonic motor can be successfully applied to the fluidic transfer mechanism of the micro-pump. This paper proposes an innovative valveless micro-pump type that uses an extensional vibration mode of a traveling wave as a volume transportation means. The proposed pump consists of coaxial cylindrical shells that join the piezoelectric ceramic ring and metal body, respectively. In order to confirm the actuation mechanism of the proposed pump model, a numerical simulation analysis was implemented. In accordance with the variations in the exciting wave mode and pump body dimension, we analyzed the vibration displacement characteristics of the proposed model, determined the optimal design condition, fabricated the prototype pump from the analysis results and evaluated its performance. The maximum flow rate was approximately and the highest back pressure was 0.88 kPa at an input voltage of . We confirmed that the peristaltic motion of the piezoelectric actuator was effectively applied to the fluid transfer mechanism of the valveless type micro pump throughout this research.

This study investigates the thermal and mechanical properties of insulation elements through the mixing of epoxy based micro and nano particles. Regarding their thermal properties, differential scanning calorimeter and dynamic mechanical analyser were used to calculate the cross-linking densities for various types of insulation elements. The mechanical properties of the bending strength, the shape and scale parameters, were obtained using the Weibull plot. This study obtained the best results in the scale parameters, at 0.5 phr, for the bending strength of the epoxy nano-and-micro mixture composites.

The copper indium disulfide () thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of . The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of ternary compound semiconductor thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to at intervals of , and the annealing temperature of the thin film was varied RT to in intervals of .

Indium tin oxide (ITO) films with a 5 nm thick Au interlayer were prepared on glass substrates. The effects of the Au interlayer on the gas sensitivity for detecting methanol vapors were investigated at room temperature. The conductivity of the film sensor increased upon exposure to methanol vapor and the sensitivity also increased proportionally with the methanol vapor concentration. In terms of the sensitivity measurements, the ITO film sensor with an Au interlayer shows a higher sensitivity than that of the conventional ITO film sensor. This approach is promising in gaining improvement in the performance of ITO gas sensors used for the detection of methanol vapor at room temperature.

Al-doped ZnO (AZO) films were prepared by an Ar: gas radio frequency (RF) magnetron sputtering system with a AZO () ceramic target at the low temperature of and annealed in hydrogen ambient at the temperature of . To investigate the influence of the flow ratio on the properties of the AZO films, the flow ratio was changed from 0.5% to 2%. As a result, the AZO films, deposited with a 1% addition, showed a resistivity of . When the AZO films were annealed at for 1 hour in a hydrogen atmosphere, the resistivity decreased from to . The lowest resistivity of was obtained by adding 1% hydrogen gas to the deposition and annealing process. The X-ray diffraction patterns of all the films showed a preferable growth orientation in the (002) plane. The spectrophotometer measurements showed that the transmittance of 85% was obtained by the film deposited with the flow ratio of 1% at 940 nm for GaAs/GaAlAs LEDs.

Deep blue organic light emitting diodes (OLEDs) were fabricated using 5 wt.% doped BCzVBi with various blue host materials such as NPB, DPVBi, MADN and TPBi. A blue OLED device, using DPVBi as host material, was constructed via NPB () / DPVBi:BCzVBi () / Bphen () / LiF () / Al () and it shows a maximum luminescence of , a current density of , a luminous efficiency of 3.3 cd/A and CIExy coordinates of (0.19, 0.15) at 4.5 V whereas the luminous efficiencies and CIExy coordinates of other blue OLEDs using NPB, MADN and TPBi as host materials have 1.1, 2.6 and 2.0 cd/A and (0.15, 0.11), (0.15, 0.10) and (0.15, 0.10), respectively. Energy transfer mechanisms between BCzVBi and its host materials were discussed with an energy band structure of host materials.

Partial discharge (PD) resistances were investigated for three types of samples: original epoxy resins, epoxy micro composites with and without the silane processing, and mixture composites with micro and nano particles. The PD was applied to these materials using rod, gap, and plane electrodes. The partial discharge resistance found in the micro composites was better than that found in the original epoxy resin. Moreover, the mixture composites of nano and micro particles had much larger resistances than the original epoxy resin or microcomposites. It can be regarded that this excellent property was due to the fact that the nano particles have a dense structure between the micro particles.