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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Transactions on Electrical and Electronic Materials
Journal Basic Information
Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
Editor in Chief :
Volume & Issues
Volume 12, Issue 6 - Dec 2011
Volume 12, Issue 5 - Oct 2011
Volume 12, Issue 4 - Aug 2011
Volume 12, Issue 3 - Jun 2011
Volume 12, Issue 2 - Apr 2011
Volume 12, Issue 1 - Feb 2011
Selecting the target year
Concept, Manufacture and Results of the Microtubular Solid Oxide Fuel Cell
Sammes, Nigel ; Galloway, Kevin ; Yamaguchi, Toshiaki ; Serincan, Mustafa ;
Transactions on Electrical and Electronic Materials, volume 12, issue 1, 2011, Pages 1~6
DOI : 10.4313/TEEM.2011.12.1.1
This paper summarized concept, manufacture and results of the micro-tubular solid oxide fuel cells (SOFCs). The cells were fabricated by co-sintering of extruded micro-tubular anode support and electrolyte coating layer, and then additional cathode coating. The cells showed quick voltage rising within 1 minute, and the electrochemical performances were closely related to the balance of fuel utilization and performance loss. And a thermal-fluid simulation model was also reported in combination with the electrochemical evaluation results on the GDC-based micro-tubular SOFCs.
Macro Modeling and Parameter Extraction of Lateral Double Diffused Metal Oxide Semiconductor Transistor
Kim, Sang-Yong ; Kim, Il-Soo ;
Transactions on Electrical and Electronic Materials, volume 12, issue 1, 2011, Pages 7~10
DOI : 10.4313/TEEM.2011.12.1.7
High voltage (HV) integrated circuits are viable alternatives to discrete circuits in a wide variety of applications. A HV device generally used in these circuits is a lateral double diffused metal oxide semiconductor (LDMOS) transistor. Attempts to model LDMOS devices are complicated by the existence of the lightly doped drain and by the extension of the poly-silicon and the gate oxide. Several physically based investigations of the bias-dependent drift resistance of HV devices have been conducted, but a complete physical model has not been reported. We propose a new technique to model HV devices using both the BSIM3 SPICE model and a bias dependent resistor model (sub-circuit macro model).
Luminescence Characteristics of ZnGa
Phosphor and Thick Film
Cha, Jae-Hyeok ; Choi, Hyung-Wook ;
Transactions on Electrical and Electronic Materials, volume 12, issue 1, 2011, Pages 11~15
DOI : 10.4313/TEEM.2011.12.1.11
In this study,
phosphors in its application to field emission displays and electroluminescence were synthesized through the precipitation method and
ions. A green luminescence activator,
ions, and a red luminescence activator were separately doped into
, which was then screen printed to an indium tin oxide substrate. The thick films of the
were deposited with the various thicknesses using nano-sized powder. The best luminescence characteristics were shown at a thickness of 60
. Additionally, green-emission
phosphor thick films, which have superior characteristics, were manufactured through the screen-printing method. These results indicate that
phosphors prepared through the precipitation method have wide application as phosphor of the full color emission.
ONO Ruptures Caused by ONO Implantation in a SONOS Non-Volatile Memory Device
Kim, Sang-Yong ; Kim, Il-Soo ;
Transactions on Electrical and Electronic Materials, volume 12, issue 1, 2011, Pages 16~19
DOI : 10.4313/TEEM.2011.12.1.16
The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25
embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic well implantation processes in order to maintain the characteristics of basic CMOS(complementary metal-oxide semiconductor) logic technology. The system subsequently suffered severe ONO rupture failure. The damage was caused by the ONO implantation and was responsible for the ONO rupture failure in the embedded SONOS process. Furthermore, based on the experimental results as well as an implanted ion's energy loss model, processes primarily producing permanent displacement damages responsible for the ONO rupture failure were investigated for the embedded SONOS process.
Crystallization Behavior of Ti-(50-x)Ni-xCu(at%) (x = 20-30) Alloy Ribbons
Kim, Min-Su ; Jeon, Young-Min ; Im, Yeon-Min ; Lee, Yong-Hee ; Nam, Tae-Hyun ;
Transactions on Electrical and Electronic Materials, volume 12, issue 1, 2011, Pages 20~23
DOI : 10.4313/TEEM.2011.12.1.20
Amorphous Ti-(50-x)Ni-xCu (at%) (x = 20, 25, 27, 30) alloy ribbons were prepared by melt spinning. Subsequently, the crystallization behavior of the alloy ribbons was investigated by X-ray diffraction and differential scanning calorimetry.
(the temperature gap between
) increased from 33 K to 47 K and the wavenumber (
) decreased from 29.44
with increasing Cu content from 20 at% to 30 at%. The activation energy for crystallization decreased from 188.5 kJ/mol to 170.6 kJ/mol with increasing Cu content from 20 at% to 25 at%; afterwards, the activation energy remained near constant. Crystallization occurred in two-stage: amorphous-B2-
in Ti-Ni-Cu alloys with Cu content less than 25 at%, while it occurred in three-stage; amorphous-B2-TiCu-
in Ti-Ni-Cu alloys with Cu content more than 27 at%.
The B2-B19-B19' Transformation in Ti-(45-x)Ni-5Cu-xMn (at%) (x = 0.5-2.0) Alloys
Jeon, Yeong-Min ; Kim, Min-Gyun ; Kim, Min-Su ; Lee, Yong-Hee ; Im, Yeon-Min ; Nam, Tae-Hyun ;
Transactions on Electrical and Electronic Materials, volume 12, issue 1, 2011, Pages 24~27
DOI : 10.4313/TEEM.2011.12.1.24
Effect of substitution of Mn for Ni on transformation behavior, shape memory characteristics and superelasticity of Ti45Ni-5Cu alloy has been investigated by means of electrical resistivity measurements, X-ray diffraction, thermal cycling tests under constant load and tensile tests. The one-stage B2-B19' transformation occurred when Mn content was 0.5 at%, above which the two-stage B2-B19-B19' transformation occurred. A temperature range where the B19 martensite exists was expanded with increasing Mn content because decreasing rate of Ms (60 K / % Mn) was larger than that of Ms' (40 K / % Mn). Ti-(45-x)Ni-5Cu-xMn alloys were deformed in plastic manner with a fracture strain of 60 % ~ 32 % depending on Mn content. Clear superelasticity was found in fully annealed Ti-(45-x)Ni-5Cu-xMn alloys with Mn content more than 1.0 at%, which was ascribe to a solid solution hardening by substitution of Mn for Ni.
Transformation Behavior of Ti-(45-x)Ni-5Cu-xCr (at%) (x = 0.5-2.0) Shape Memory Alloys
Im, Yeon-Min ; Jeon, Young-Min ; Kim, Min-Su ; Lee, Yong-Hee ; Kim, Min-Kyun ; Nam, Tae-Hyun ;
Transactions on Electrical and Electronic Materials, volume 12, issue 1, 2011, Pages 28~31
DOI : 10.4313/TEEM.2011.12.1.28
Transformation behavior and shape memory characteristics of Ti-(45-x)Ni-5Cu-xCr (x=0.5-2.0) alloys have been investigated by means of electrical resistivity measurements, differential scanning calorimetry, X-ray diffraction and thermal cycling tests under constant load. Two-stage B2-B19-B19' transformation occurred in Ti-(45-x)Ni-5Cu-xCr alloys. The B2-B19 transformation was separated clearly from the B19-B19' transformation in Ti-44.0Ni-5Cu-1.0Cr and Ti-43.5Ni-5Cu-1.5Cr alloys. A temperature range where the B19 martensite exists was expanded with increasing Cr content because decreasing rate of Ms (85 K / % Cr) was larger than that of Ms' (17 K / % Cr). Ti-(45-x)Ni-5Cu-xCr alloys were deformed in plastic manner with a fracture strain of 68% ~ 43% depending on Cr content. Substitution of Cr for Ni improves the critical stress for slip deformation in a Ti-45Ni-5Cu alloy due to solid solution hardening.
Control of Glass Infiltration at the Al
Jo, Tae-Jin ; Yeo, Dong-Hun ; Shin, Hyo-Soon ; Hong, Youn-Woo ; Cho, Yong-Soo ;
Transactions on Electrical and Electronic Materials, volume 12, issue 1, 2011, Pages 32~34
DOI : 10.4313/TEEM.2011.12.1.32
A zero-shrinkage sintering process in which the shrinkage of the x-y axis is controlled to be zero is in great demand due to the high integration trend in ceramic modules. Among the zero-shrinkage sintering processes available, the glass infiltration method proposed in the preliminary study with an
structure is one promising method. However, problems exist in regard to the glass infiltration method, including partially incomplete joining between
and glass layers due to the precipitate of Ti-Pb rich phase during the sintering process. Therefore, we wish to solve the de-lamination problems and suggest a mechanism for delamination and the solutions in the zero-shrinkage low temperature co-fired ceramic (LTCC) layers. The de-lamination problems diminished using the Pb-BSi-O glass without
in Pb-B-Ti-Si-O glass and produced a very dense zero-shrinkage LTCC.
Effect of MIM and n-Well Capacitors on Programming Characteristics of EEPROM
Lee, Chan-Soo ; Cui, Zhi-Yuan ; Jin, Hai-Feng ; Sung, Si-Woo ; Lee, Hyung-Gyoo ; Kim, Nam-Soo ;
Transactions on Electrical and Electronic Materials, volume 12, issue 1, 2011, Pages 35~39
DOI : 10.4313/TEEM.2011.12.1.35
An electrically erasable programmable read-only memory (EEPROM) containing a stacked metal-insulator-metal (MIM) and n-well capacitor is proposed. It was fabricated using a 0.18
m standard complementary metal-oxide semiconductor process. The depletion capacitance of the n-well region was effectively applied without sacrificing the cell-area and control gate coupling ratio. The device performed very similarly to the MIM capacitor cell regardless of the smaller cell area. This is attributed to the high control gate coupling ratio and capacitance. The erase speed of the proposed EEPROM was faster than that of the cell containing the MIM control gate.
Electrical Properties of a CuPc Field-Effect Transistor Using a UV/Ozone Treated and Untreated Substrate
Lee, Ho-Shik ; Cheon, Min-Woo ; Park, Yong-Pil ;
Transactions on Electrical and Electronic Materials, volume 12, issue 1, 2011, Pages 40~42
DOI : 10.4313/TEEM.2011.12.1.40
An organic field-effect transistor (OFET) was fabricated using a copper phthalocyanine (CuPc) as the active layer on the silicon substrate. The CuPc FET device was configured as a top-contact type. The substrate temperature was room temperature. The CuPc thickness was 40 nm, and the channel length and channel width were 100
3 mm, respectively. Typical current-voltage (I-V) characteristics of the CuPc FET were observed and subsequently compared to the UV/ozone treatment on substrate surface.