Graphene-based polymer nanocomposites are very promising candidates for new high-performance materials that offer improved mechanical, barrier, thermal and electrical properties. Herein, an approach is presented to improve the mechanical, thermal and electrical properties of unsaturated polyester resin (UPR) by using graphene nano sheets (GNS). The extent of dispersion of GNS into the polymer matrix was also observed by using the scanning electron microscopy (SEM) which indicated homogeneous dispersion of GNS through the UPR matrix and strong interfacial adhesion between the GNS and UPR matrix were achieved in the UPR composite, which enhanced the mechanical properties. The tensile strength of the nanocomposites improved at a tune of 52% at a GNS concentration of 0.05%. Again the flexural strength also increased around 92% at a GNS concentration of 0.05%. Similarly the thermal properties and the electrical properties for the nanocomposites were also improved as evidenced from the differential scanning caloriemetry (DSC) and dielectric strength measurement.

At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.

This paper describes the highly productive process technologies of microprobe arrays, which were used for a probe card to test a Dynamic Random Access Memory (DRAM) chip with fine pitch pads. Cantilever-type microprobe arrays were fabricated using conventional micro-electro-mechanical system (MEMS) process technologies. Bonding material, gold-tin (Au-Sn) paste, was used to bond the Ni-Co alloy microprobes to the ceramic space transformer. The electrical and mechanical characteristics of a probe card with fabricated microprobes were measured by a conventional probe card tester. A probe card assembled with the fabricated microprobes showed good x-y alignment and planarity errors within and , respectively. In addition, the average leakage current and contact resistance were approximately 1.04 nA and 0.054 ohm, respectively. The proposed highly productive microprobes can be applied to a MEMS probe card, to test a DRAM chip with fine pitch pads.

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with . When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing content from 0 to 20 % in /Ar plasma. The TiN etch rate reached maximum at 20% addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in /Ar plasma.

Advanced semiconductor manufacturing technology requires methods to maximize tool efficiency and improve product quality by reducing process variability. Real-time plasma process monitoring and diagnosis have become crucial for fault detection and classification (FDC) and advanced process control (APC). Additional sensors may increase the accuracy of detection of process anomalies, and optical monitoring methods are non-invasive. In this paper, we propose the use of a chromatic data acquisition system for real-time in-situ plasma process monitoring called the Plasma Eyes Chromatic System (PECS). The proposed system was initially tested in a six-inch research tool, and it was then further evaluated for its potential to detect process anomalies in an eight-inch production tool for etching blanket oxide films. Chromatic representation of the PECS output shows a clear correlation with small changes in process parameters, such as RF power, pressure, and gas flow. We also present how the PECS may be adapted as an in-situ plasma arc detector. The proposed system can provide useful indications of a faulty process in a timely and non-invasive manner for successful run-to-run (R2R) control and FDC.

(hereafter, No excess NKN) ceramics and with excess (hereafter, Excess NKN) were fabricated by the conventional solid state sintering method, and their phase transition properties and dielectric properties were investigated. The crystalline structure of No excess NKN ceramics and Excess NKN ceramics were shown characteristics of polymorphic phase transition (hereafter, PPT), especially shift from the orthorhombic to tetragonal phase by increasing sintering temperature range from to . Also, the temperature coefficient of capacitance (hereafter, TCC) of No excess NKN ceramics and Excess NKN ceramics from to was measured to evaluate temperature stability for applications in cold regions. The TCC of No excess NKN and Excess NKN ceramics showed positive TCC characteristics at a temperature range from to . Especially, Excess NKN showed a smaller TCC gradient than those of Excess NKN ceramics in range from to . Therefore, NKN piezoelectric ceramics combined with temperature compensated capacitor having negative temperature characteristics is desired for usage in cold regions.

This paper introduces 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) doped liquid crystal (LC) alignment properties on a rubbed polyimide (PI) layer as a function of the doping concentration of TIPS pentacene. Pretilt angles, photomicrographs, and electro-optical properties of TIPS pentacene doped LCs were comparable to those of pure LCs. However, TIPS pentacene in a LC medium supported twisted nematic-liquid crystal displays (TN-LCDs) to improve electro-optical properties. The threshold voltages observed in the TN cells decreased as the TIPS pentacene concentration increased. In addition, suitable response times were observed in TN cells.

Dye-sensitized solar cells have a FTO//Dye/Electrode/Pt counter electrode structure, yet more than a 10% electron loss occurs at each interface. A passivating layer between the /FTO glass interface can prevent this loss of electrons. In theory, ZnO has excellent electron collecting capabilities and a 3.4 eV band gap, which suppresses electron mobility. FTO glass was coated with ZnO thin films by RF-magnetron sputtering; each film was deposited under different :Ar ratios and RF-gun power. The optical transmittance of the ZnO thin film depends on the thickness and morphology of ZnO. The conversion efficiency was measured with the maximum value of 5.22% at an Ar: ratio of 1:1 and RF-gun power of 80 W, due to effective prevention of the electron recombination into electrolytes.

Al:ZnO thin films were deposited using the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. With the increase in the deposition temperature and the decrease in the radio frequency sputtering power, the crystallinity was increased and the surface roughness was decreased, which lead to the decrease in the electrical resistivity of the film. It is also clearly observed that, the intensity of the (002) XRD peak increases with increasing the substrate temperature [1,2]. The electrical resistivity and optical transmittance of the Al:ZnO thin film were analyzed as a function of the post-annealing temperature. It can be seen that with the annealing temperature set at , the resistivity decreases to a minimum value of and the transmittance increases to a maximum value of 85% of the Al:ZnO thin film.

The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere, C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of and between the modified of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.

The effect of the mixing ratio of spherical silica on the electrical insulation breakdown strength in an epoxy/silica composite was studied. Spherical silicas with two average particle sizes of and were mixed in different mixing ratios, and their total filling content was fixed at 60 wt%. In order to observe the dispersion of the silicas and the interfacial morphology between silica and epoxy matrix, scanning electron microscopy (SEM) was used. The electrical insulation breakdown strength was estimated in sphere-sphere electrodes with different insulation thicknesses of 1, 2, and 3 mm. Electrical insulation breakdown strength decreased with increasing mixing ratio of and the thickness dependence of the breakdown strength was also observed.

In order to develop high voltage (HV) insulation materials, epoxy/spherical alumina composites with two different particle sizes (in ) were prepared and a dynamic mechanical analysis (DMA) and electrical insulation breakdown strength test were carried out in sphere-sphere electrodes and the data were estimated using Weibull statistical analysis. Alumina content varied from 50 to 70 wt%. The electrical insulation breakdown strength for epoxy/alumina (50 wt%) was 44.0 kV/1 mm and this value decreased with increasing alumina content. The effects of insulation thickness and alumina particle size on the insulation breakdown strength were also studied. The insulation thickness varied from 1 mm to 3 mm, and the particle sizes were 7.3 or .