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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Transactions on Electrical and Electronic Materials
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Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 16, Issue 6 - Dec 2015
Volume 16, Issue 5 - Oct 2015
Volume 16, Issue 4 - Aug 2015
Volume 16, Issue 3 - Jun 2015
Volume 16, Issue 2 - Apr 2015
Volume 16, Issue 1 - Feb 2015
Selecting the target year
Surface Passivation Schemes for High-Efficiency c-Si Solar Cells - A Review
Balaji, Nagarajan ; Hussain, Shahzada Qamar ; Park, Cheolmin ; Raja, Jayapal ; Yi, Junsin ; Jeyakumar, R. ;
Transactions on Electrical and Electronic Materials, volume 16, issue 5, 2015, Pages 227~233
DOI : 10.4313/TEEM.2015.16.5.227
To reduce the cost of solar electricity, the crystalline-silicon (c-Si) photovoltaic industry is moving toward the use of thinner wafers (100 μm to 200 μm) to achieve a high efficiency. In this field, it is imperative to achieve an effective passivation method to reduce the electronic losses at the c-Si interface. In this article, we review the most promising surface passivation schemes that are available for high-efficiency solar cells.
Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review
Raja, Jayapal ; Jang, Kyungsoo ; Nguyen, Cam Phu Thi ; Yi, Junsin ; Balaji, Nagarajan ; Hussain, Shahzada Qamar ; Chatterjee, Somenath ;
Transactions on Electrical and Electronic Materials, volume 16, issue 5, 2015, Pages 234~240
DOI : 10.4313/TEEM.2015.16.5.234
Amorphous oxide-based thin-film transistors (TFTs) have drawn a lot of attention recently for the next-generation high-resolution display industry. The required field-effect mobility of oxide-based TFTs has been increasing rapidly to meet the demands of the high-resolution, large panel size and 3D displays in the market. In this regard, the current status and major trends in the high mobility oxide-based TFTs are briefly reviewed. The various approaches, including the use of semiconductor, dielectric, electrode materials and the corresponding device structures for realizing high mobility oxide-based TFT devices are discussed.
High Performance CMOS Charge Pumps for Phase-locked Loop
Rahman, Labonnah Farzana ; Ariffin, NurHazliza Bt ; Reaz, Mamun Bin Ibne ; Marufuzzaman, Mohammad ;
Transactions on Electrical and Electronic Materials, volume 16, issue 5, 2015, Pages 241~249
DOI : 10.4313/TEEM.2015.16.5.241
Phase-locked-loops (PLL) have been employed in high-speed data transmission systems like wireless transceivers, disk read/write channels and high-speed interfaces. The majority of the researchers use a charge pump (CP) to obtain high performance from PLLs. This paper presents a review of various CMOS CP schemes that have been implemented for PLLs and the relationship between the CP parameters with PLL performance. The CP architecture is evaluated by its current matching, charge sharing, voltage output range, linearity and power consumption characteristics. This review shows that the CP has significant impact on the quality performance of CP PLLs.
Design and Performances of Implantable CPW Fed Apollian Shaped Antenna at 2.45 GHz ISM Band for Biomedical Applications
Kumar, S. Ashok ; Sankar, J. Navin ; Dileepan, D. ; Shanmuganantham, T. ;
Transactions on Electrical and Electronic Materials, volume 16, issue 5, 2015, Pages 250~253
DOI : 10.4313/TEEM.2015.16.5.250
A novel implantable CPW fed Apollian shaped antenna embedded into human tissue is proposed for ISM band biomedical applications. The proposed antenna is made compatible for implantation by embedding it in an alumina ceramic substrate(ε
=9.8 and thickness= 0.65 mm). The proposed antenna covers the ISM band of 2.45 GHz. The radiation parameters such as return loss, xy-plane, xz-plane, and yz-plane etc., are measured and analyzed using the agilent vector network analyzer. The proposed antenna has substantial advantages, including low profile, miniaturization ability, lower return loss, better impedance matching, and high gain over conventional implanted antennas.
Performance Optimization of LDMOS Transistor with Dual Gate Oxide for Mixed-Signal Applications
Baek, Ki-Ju ; Kim, Yeong-Seuk ; Na, Kee-Yeol ;
Transactions on Electrical and Electronic Materials, volume 16, issue 5, 2015, Pages 254~259
DOI : 10.4313/TEEM.2015.16.5.254
This paper reports the optimized mixed-signal performance of a high-voltage (HV) laterally double-diffused metaloxide-semiconductor (LDMOS) field-effect transistor (FET) with a dual gate oxide (DGOX). The fabricated device is based on the split-gate FET concept. In addition, the gate oxide on the source-side channel is thicker than that on the drain-side channel. The experiment results showed that the electrical characteristics are strongly dependent on the source-side channel length with a thick gate oxide. The digital and analog performances according to the source-side channel length of the DGOX LDMOS device were examined for circuit applications. The HV DGOX device with various source-side channel lengths showed reduced by maximum 37% on-resistance (R
) and 50% drain conductance (g
). Therefore, the optimized mixed-signal performance of the HV DGOX device can be obtained when the source-side channel length with a thick gate oxide is shorter than half of the channel length.
Electrical and Mechanical Properties of Epoxy/Micro-sized Alumina Composite and the Effect of Nano-sized Alumina on Those Properties
Park, Jae-Jun ; Shin, Seong-Sik ; Yoon, Chan-Young ; Lee, Jae-Young ; Park, Joo-Eon ;
Transactions on Electrical and Electronic Materials, volume 16, issue 5, 2015, Pages 260~263
DOI : 10.4313/TEEM.2015.16.5.260
Epoxy/micro-sized alumina composite was prepared and the effects of alumina content on the electrical and mechanical properties were investigated in order to develop an insulation material for gas insulated switchgear (GIS). Nano-sized alumina (average particle size: 30 μm) was also incorporated into the epoxy/micro-sized alumina composite. An electrical insulation breakdown strength test was carried out in sphere-sphere electrodes and the data were estimated by Weibull statistical analysis. Tensile strength was measured at a crosshead speed of 10 mm/min using a universal testing machine. Alumina content was varied from 0 wt% to 70 wt%.). As micro-sized alumina content increased, insulation breakdown strength increased until 40 wt% alumina content and decreased after that content. The tensile strength of a neat epoxy system was 82.2 MPa and that value for 60 wt% alumina content was 91.8 MPa, which was 111.7% higher than inthe neat epoxy system. The insulation breakdown strength of micro-sized alumina (60 wt%)/nano-sized alumina (1 phr) glycerol diglycidyl ether (GDE) (1 phr) composite was 54.2 MPa, which was 116% higher than the strength of the system without nano-sized alumina.
Growth and Characteristics of Al
/AlCrNO/Al Solar Selective Absorbers with Gas Mixtures
Park, Soo-Young ; Han, Sang-Uk ; Kim, Hyun-Hoo ; Jang, Gun-Eik ; Lee, Yong-Jun ;
Transactions on Electrical and Electronic Materials, volume 16, issue 5, 2015, Pages 264~267
DOI : 10.4313/TEEM.2015.16.5.264
AlCrNO cermet films were prepared on aluminum substrates using a DC-reactive magnetron sputtering method and a water-cooled Al:Cr target. The Al
/AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF)/Al/substrate of the 5 multi-layers was prepared according to the Ar and (N
) gas-mixture rates. The Al
of the top layer is the anti-reflection layer of triple AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF) layers, and an Al metal forms the infrared reflection layer. In this study, the crystallinity and surface properties of the AlCrNO thin films were estimated using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM), while the composition of the thin films was systematically investigated using Auger electron spectroscopy (AES). The optical properties of the wavelength spectrum were recorded using UH4150 spectrophotometry (UV-Vis-NIR) at a range of 0.3 μm to 2.5 μm.
Research on the Power Drop of Photovoltaic Module’s Aging Through the Thermal Shock Test
Kang, MinSoo ; Jeon, YuJae ; Kim, DoSeok ; Shin, YoungEui ;
Transactions on Electrical and Electronic Materials, volume 16, issue 5, 2015, Pages 268~273
DOI : 10.4313/TEEM.2015.16.5.268
While analyzing the specimens before and after the thermal shock test, we found that the power drop rate of the bare cell was 5.08%, while the power drop rate of the ribboned cell was 16.49%. In comparative terms, the efficiency was lower at the ribboned cell than at the bare cell. While analyzing through EL (Electroluminescence) shots and cross sections, we tried to decipher the exact cause of the power drop. Although mere color change of the cell was observed at the surface of the bare cell, no abnormality could be found inside the cell. On the surface of the ribboned cell, the short circuit of gridfinger extended from the front part of the front electrode of the ribboned cells. Therefore, cracks occurred on the surface of the cell. Cracks also appeared inside the cell. While analyzing the I-V curve, we determined an increase in the leakage current and an increase of resistances in series in the bare cell. In the ribboned cell, the resistances in parallel reduced remarkably. An increase of resistances in series could also be verified. Conclusively, we deduced that the power drop rate in the bare cell is a life span of the cell itself; aging is the cause of power drop rate in cells. In case of ribboned cell, the power drop rate was directly influenced by internal cracks and an intermetallic compound layer joining the ribbon at the front electrode.
Characterization of Graphite Oxide Reduced by Thermal and/or Chemical Treatments
Kim, Jungsoo ; Nam, Dae-Geun ; Yeum, Jeong Hyun ; Suh, Sungbu ; Oh, Weontae ;
Transactions on Electrical and Electronic Materials, volume 16, issue 5, 2015, Pages 274~279
DOI : 10.4313/TEEM.2015.16.5.274
Reduced graphite oxides (rGOs) were prepared by the common graphite oxidation method and the subsequent reductions. The reduction of graphite oxides (GOs) was conducted chemically and/or thermally. To further reduce the as-prepared rGOs, GOs were treated with chemical/thermal reductions or thermal/chemical reductions, in which the reduction sequence was also considered. The structural changes of as-prepared rGOs, depending on reduction methods, were investigated by X-ray diffraction analyses, Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy. In addition, we discuss the structural change of the rGOs and their closely related physical and electrical properties, such as thermogravimetry, nitrogen adsorption isotherm, and sheet resistance.
Optical Properties of Multi-layer TiNO/AlCrNO/Al Cermet Films Using DC Magnetron Sputtering
Han, Sang-Uk ; Park, Soo-Young ; Kim, Hyun-Hoo ; Jang, Gun-Eik ; Lee, Yong-Jun ;
Transactions on Electrical and Electronic Materials, volume 16, issue 5, 2015, Pages 280~284
DOI : 10.4313/TEEM.2015.16.5.280
Among many the oxynitrides, TiNO and AlCrNO, have diverse applications in different technological fields. We prepared TiNO/AlCrNO/Al thin films on aluminum substrates using the method of dc reactive magnetron sputtering. The reactive gas flow, gas mixture, and target potential were applied as the sputtering conditions during the deposition in order to control the chemical composition. The multi-layer films have been prepared in an Ar and O
gas mixture rate. The surface properties were estimated by performing scanning electron microscopy (SEM). At a wavelength range of 0.3~2.5 μm, the exact composition and optical properties of thin films were measured by Auger electron spectroscopy (AES) and Ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry. The optimal absorptance of multi-layer films was exhibited above 95.5% in the visible region of the electromagnetic spectrum, and the reflectance was achieved below 1.89%.
Electron Transport Mechanisms in Ag Schottky Contacts Fabricated on O-polar and Nonpolar m-plane Bulk ZnO
Kim, Hogyoung ;
Transactions on Electrical and Electronic Materials, volume 16, issue 5, 2015, Pages 285~289
DOI : 10.4313/TEEM.2015.16.5.285
We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O
O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).
Organic Bistable Switching Memory Devices with MeH-PPV and Graphene Oxide Composite
Senthilkumar, V. ; Kim, Yong Soo ;
Transactions on Electrical and Electronic Materials, volume 16, issue 5, 2015, Pages 290~292
DOI : 10.4313/TEEM.2015.16.5.290
We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (10
cycles without degradation) and long retention time (5 × 10
s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.