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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Transactions on Electrical and Electronic Materials
Journal Basic Information
Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
Editor in Chief :
Volume & Issues
Volume 2, Issue 4 - Dec 2001
Volume 2, Issue 3 - Sep 2001
Volume 2, Issue 2 - Jun 2001
Volume 2, Issue 1 - Mar 2001
Selecting the target year
The Present-Day State and Outlooks of Using Plasma-Energy Technologies in Heat-and-Power Industry
Karpenko, E.I. ; Messerle, V.E. ;
Transactions on Electrical and Electronic Materials, volume 2, issue 2, 2001, Pages 1~4
Urgency of using plasma-energy technologies in power industry, is outlined, increasing of economical efficiency, decreasing of energy consumption and decreasing of environmental pollution, are shown, scientific and technical bases for plasma-energy technologies of fuel utilisation, are designed, results of theoretical, experimental and rig investigations of processes of plasma ignition, gasification, thermochemical preparation for burning and combined processing of coals, are presented, results of realisation of plasma technologies of residual-oil-free (mazout) pulverised-coal boiler kindling, lighting of torch and stabilisation of luid slagging in furnaces with removal of fluid slag, are described.
Carbon Containing Compositions
Mansurova, R.M. ; Mansurov, Z.A. ;
Transactions on Electrical and Electronic Materials, volume 2, issue 2, 2001, Pages 5~15
The experiment established optimal conditions for over-carbonization. With the use of the electron microscopy and X-ray phase analysis the regularities of carbon deposit formation in process of methane and propane pyrolysis on the zeolites, Kazakhstan natural clays, chrome and bauxite sludge containing metal oxides of iron subgroup, have been studied. In process of over-carbonization the trivalent iron was reduced to metal form. In addition, the carbon tubes of divers morphology had been impregnated with ultra-dispersed metal particles. The kinetic parameters of carbon formation in process of methane decomposition on the zeolite - CoO mixture surface were investigated by method of thermo-gravimetric analysis. The morphology and structure of formed carbon fibrils, with the metal particles fixed at their ends, have been investigated, the formation of branched carbon fibrils pattern, so called octopus, being found. Also, the walnut shells and grape kernel carbonization, their immobilization by the cells of selective absorption of heavy metal and sulfur dioxide ions have been studied. The example of metal-carbon composites used as adsorbents for wastewater purification, C
hydrocarbon cracking catalysts and refractory materials with improved properties have been considered.
Optoelectronic Characteristics of Hydrogen and Oxygen Annealed Si-O Superlattice Diode
Seo, Yong-Jin ;
Transactions on Electrical and Electronic Materials, volume 2, issue 2, 2001, Pages 16~20
Optoelectronic characteristics of the superlattice diode as a function of deposition temperature and annealing conditions have been studied. The multilayer nanocrystalline silicon/adsorbed oxygen (nc/Si/O) superlattice formed by molecular beam epitaxy (MBE) system. Experimental results showed that deposition temperature of 550
, followed by hydrogen annealing leads to best results, in terms of optical photoluminescence (PL) and electrical current-voltage (I-V) characteristics. Consequently, the experimental results of multilayer Si/O superlattic device showed the stable photoluminescence and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic devices, and can be readily integrated with conventional silicon ULSI processing.
The Effect of Pyrazine on TMAH:IPA Single-crystal Silicon Anisotropic Etching Properties
Gwiy-Sang Chung ; Tae-Song Kim ;
Transactions on Electrical and Electronic Materials, volume 2, issue 2, 2001, Pages 21~25
This paper presents the effect of pyrazine on tetramethylammonium hydroxide (TMAH):isopropyl alcohol (IPA) single-crystal silicon anisotropic etching properties. With the addition of IPA to TMAH solutions, etching characteristics are exhibited an improvement in flatness on the etching front and a reduction in undercutting, but the etch rate on (100) silicon is decreased. The (100) silicon etch rate is improved by the addition of pyrazine. An etch rate on (100) silicon of 0.8
/min, which is faster by 13% than a 20 wt.% solution of pure TMAH, is obtained using 20 wt.% TMAH: 0.5 g/100 ml pyrazine solutions, but the etch rate on (100) silicon is decreased when more pyrazine is added. With the addition of pyrazine to a 25 wt.% TMAH solution, variations in flatness on the etching front are not observed and the undercutting ratio is reduced by 30~50%. These results indicate that anisotropic etching technology using TMAH:IPA:pyrazine solutions provides a powerful and versatile method for realizing of microelectromechanical systems.
Electrochemical Etch-Stop Suitable for MEMS Applications
Chung, Gwiy-Sang ; Kim, Sun-Chunl ; Kim, Tae-Song ;
Transactions on Electrical and Electronic Materials, volume 2, issue 2, 2001, Pages 26~31
This paper presents the electrochemical etch-stop characteristics of single-crystal Si(001) wafers in tetramethyl ammonium hydroxide(TMAH):isopropyl alcohol(IPA):pyrazine solutions. The addition of pyrazine to TMAH:IPA solutions increased the etch rate of (100) Si, thus the etching time required by the etch-stop process shortened. The current-voltage(I-V) characteristics of n- and p-type Si in TMAH:IPA:pyrazine solutions were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type Si, respectively, were obtained and applied potential was selected between n- and p-type Si PPs. The electrochemical etch-stop method was used to fabricate 801 microdiaphragms of 20
thickness on a 5-inch Si wafer. The average thickness of fabricated 801 microdiaphragms on one Si wafer was 20.03
and the standard deviation was
. The Si surface of the etch-stopped microdiaphragm was extremely flat with no noticeable taper or nonuniformity.
Study on Sol-Gel Prepared Phosphosilicate Glass-Ceramic For Low Temperature Phosphorus Diffusion into Silicon
Kim, Young-Sig ;
Transactions on Electrical and Electronic Materials, volume 2, issue 2, 2001, Pages 32~36
A new solid source for low temperature diffusion into silicon was developed. The source wafer consists of an “active” compound, which is sol-gel prepared phosphosilicate glass-ceramics containing 56% P
5/, embedded in a skeletal foam-like, inert substrate. Phosphorus diffusion from the new solid sources at low temperatures (800-875
) produced reprodecible sheet resistances and shallow junctions. From a series of one hour doping runs, the life time of the phosphosilicate source was determined to be over 40 hours. The effective diffusion coefficient of phosphorus into silicon and the corresponding activation energy at 850
were determined to be 7.5
/sec and ∼3.9 eV, respectively.
Photo Catalytic Ability of Acicular Shaped TiO
Rutile Powder in Aqueous Metal-EDTA Solutions
Kim, Sun-Jae ; chang-Joo choi ; Park, Soon-Dong ; Hwang, Jong-Sun ; Han, Byung-Sung ;
Transactions on Electrical and Electronic Materials, volume 2, issue 2, 2001, Pages 37~41
Photo catalytic characteristics of nano-sized TiO
powder with rutile phase produced using homogeneous precipitation process at low temperatures (HPPLT) were compared with those of commercial P-25 powder by Degussa Co. The TiO
powder by HPPLT showed very higher photoactivity in the removal rate, showing lower pH values in the solution, than the P-25 powder when eliminating metal ions such as Pb and Cu from aqueous metal-EDTA solutions. This can be inferred the more rapid photo-oxidation or -reduction of metal ions from the aqueous solution, together with relatively higher efficiencies in the use of electron-hole pair formed on the surface of TiO
particle, under UV light irradiation. Also, in the view of the TiO
particle morphology, compared to the well-dispersed spherical P-25 particle, the agglomerated TiO
particle by HPPL T consists of acicular typed primary particle with the thickness ranged of 3∼7 nm, which would be more effective to the photocatalytic reactions without electron-hole recombination on the surface of the TiO
particle under the UV light irradiation. It is, therefore, thought that the higher photo activity of the rutile TiO
powder by HPPLT in the aqueous solutions resulted from having its higher specific surface area as well as acicular shape primary particle with very thin thickness.
Ozone Density Estimation and Stable Supply in the Thin Film Growth
Lim, Jung-Kwan ; Park, Yong-Pil ; Oh, Geum-Gon ;
Transactions on Electrical and Electronic Materials, volume 2, issue 2, 2001, Pages 42~45
An ozone condensation system is evaluated from the viewpoint of an ozone supplier for Bi-superconductor thin film growth. An ozone condenser by a selective adsorption on the silica gel surface is constructed. Ozone density is evaluated by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is found to be available to the density evaluation from dilute to highly condensed ozone. The highest ozone density condensed by the adsorption method is evaluated to be 97 mol%.