The electrical characteristics of CMOS inverter with LDMOSFET are studied for high power and digital circuit application by using two dimensional MEDICI simulator. The simulation is done in terms of voltage transfer characteristic and on-off switching properties of CMOS inverter with variation of channel length and channel doping levels. The channel which surrounds a junction-type source in LDMOSFET is considered to be an important parameter to decide a circuit operation of CMOS inverter. The digital logic levels of input voltage show to increase with increase of n-channel length and doping levels while the logic output levels show to the almost constant.

In this paper, a CMOS complementary bridge rectifier for driving RFID transponder chips is presented. The proposed RFID CMOS complementary bridge rectifier is designed with two NMOSs at the input, which are configured by cross-connected gate structures, and two PMOSs and two NMOSs at the output, which are configured by diode-connected MOS structures. Output characteristics of the proposed rectifier are analyzed with the high frequency small-signal equivalent circuit and verified with SPICE for RFID operating frequencies of 13.56 MHz HF for ISO 18000-3, 915MHz UHF for ISO 18000-6, and 2.45 GHz microwave for ISO 18000-4. Simulation results show well-rectified and high enough DC output voltages for driving the low power microchip in the RFID transponder for the frequency range from HF to microwave. DC output voltages are dropped by only around 0.7 V from the input peak-to-peak voltages.

The oxidizer-induced corrosion state and microstructure of surface passive metal-oxide layer greatly influenced on the removal rate of tungsten film according to the slurry chemical composition of different mixed oxidizers. In this paper, the actual polishing mechanism and pH-potential equilibrium diagram obtained from potentiodynamic polarization curve were electrochemically compared. An electrochemical corrosion effect implies that slurries with the highest removal rate (RR) have the high dissolution rate.

In this paper we present that the effects of polymer adsorption on stabilities and CMP performance of ceria abrasive particles. Characterization of ceria abrasive particles in the presence of poly(vinyl pyrrolidone) (PVP) was performed by the measurements of adsorbed amounts of PVP, average sizes, and the back scattering intensities of the ceria abrasive particles as functions of PVP molecular weight and PVP concentration. The ceria abrasive particles in the presence of PVP were used to polish films deposited on Si wafers in order to understand the effect of PVP adsorption on chemical mechanical polishing (CMP) performance, together with ceria abrasive particles without PVP. Adsorption of PVP on the ceria abrasive particles enhanced the stability of ceria abrasive particles due to steric stabilization of the thick adsorbed layer of PVP. Removal rates of the deposited films by the ceria abrasive particles in the presence of PVP were much lower than those in the absence of PVP and their magnitudes were decreased with an increase in the concentration of free PVP chains in the dispersion media. This suggests that the CMP performance in the presence of PVP could be mainly controlled by the hydrodynamic interactions between the adsorbed PVP chains and the free ones. Moreover, the molecular weight dependence of PVP on the removal rates of the deposited films was hardly observed. On the other hand, high removal rate selectivity between the deposited films in the presence of PVP was not observed.

Diamond-like carbon (DLC) films were prepared on silicon substrates by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method using methane and hydrogen gas. We examined the effects of the post annealing temperature on the tribological properties of the DLC films using friction force microscopy (FFM). The films were annealed at various temperatures ranging from 300 to in steps of using RTA equipment in nitrogen ambient. The thickness of the film was observed by scanning electron microscopy (SEM) and surface profile analysis. The surface morphology and surface energy of the films were examined using atomic force microscopy and contact angle measurement, respectively. The hardness of the DLC film was measured as a function of the post annealing temperature using a nano-indenter. The tribological characteristics were investigated by atomic force microscopy in FFM mode.

The microstructure and electrical properties of the varistors, which are composed of ceramics, were investigated for different contents. The increase of content led to more densified ceramics, whereas abruptly decreased the nonlinear properties by incorporating beyond 1.0 mol%. The highest nonlinearity was obtained from 0.5 mol% , with the nonlinear coefficient of 81.6 and the leakage current of . The increase of sintering time and temperature greatly decreased the nonlinear properties. As the content increased, the donor density increased from and the barrier height greatly decreased with increasing content, reaching a maximum (1.47 eV) in 0.5 mol% .᠏묀ऀ㘲〮〰㐵㬅K䍄乍

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately . All PZT thick films showed the typical XRD patterns of a polycrystalline rhombohedral structure. And in the PZT thick films sintered at , the pyrochlore phase was observed due to the evaporation of PbO. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at were 445.2 and 1.90 % at 1 kHz, respectively. The remanent polarization and coercive field of the PZT thick films sintered at were and 19.13 kV/cm, respectively.

The effect of surface treatment of fillers on the mechanical, electrical properties, and tracking performance of silicone rubber insulators have been investigated. For base polymer, ) vinyl poly(dimethyl-methylphenyl) siloxane(VPMPS) containing dimethyl siloxane and methylphenyl siloxane was prepared by the equilibrium polymerization. High voltage silicone rubber composites(HVSRC) were prepared from VPMPS, nano-silica, and alumina trihydrate (ATH) modified by various coupling agents. Bound rubber of uncured silicone rubber, cross-linking density of the vulcanizate as well as the mechanical, electrical properties, and tracking performance were measured.

In the present work, we investigated the holographic grating erasing method by means of the optical method. It was formed the grating under the interference of holographic recording He-Ne laser beams on chalcogenide thin film with various film thickness and erased the holographic grating by non-polarized He-Ne laser beam. As the results, the recording grating erased the 80 % of formed grating by non-polarized He-Ne laser beam. It was confirmed that the erasing characteristics by non-polarized laser beam need to improve the focusing of beam and the control of beam intensity. And then it can be expected as the application possibility of rewritable holographic memory technology.

In this study, the response surface modeling of the pretilt angle control using in-situ photoalignment method with oblique UV exposure .on plastic substrate is investigated. The pretilt angle is the main factor to determine the alignment of the liquid crystal display. The response surface model is used to analyze the variation of the pretilt angle on the various process conditions. Heating temperature and UV exposure time are considered as input factors. The liquid crystal (LC) pretilt angle increased with increasing heating temperature and UV exposure time. The analysis of variance is used to analyze the statistical significance and the effect plots are also investigated to examine the relationship between the process parameters and the response.

An attempting to produce a p-type diluted magnetic semiconductor (DMS) using thin films was made by suitable control of the deposition parameters including deposition temperature, deposition pressure, and doping level using a pulsed laser deposition method. T (TCO) films deposited at at a pressure of Torr showed an anomalous Hall effect with p-type characteristics. On the other hand, films deposited at at Torr showed n-type behaviors by a decreased solubility of cobalt. The charge carrier concentration in the p-type TCO films was approximately at 300 K and the anomalous Hall effect in the p-type TCO films was controlled by a side-jump scattering mechanism. The magnetoresistance (MR), measured at 5 K in p-type TCO films showed a positive behavior in an applied magnetic field and the MR ratio was approximately 3.5 %. The successful preparation of p-type DMS using the TCO films has the potential for use in magnetic tunneling junction devices.