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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Transactions on Electrical and Electronic Materials
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Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 8, Issue 6 - Dec 2007
Volume 8, Issue 5 - Oct 2007
Volume 8, Issue 4 - Aug 2007
Volume 8, Issue 3 - Jul 2007
Volume 8, Issue 2 - Apr 2007
Volume 8, Issue 1 - Feb 2007
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Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology Chemical Mechanical Planarization
Stefanova, Y. ; Cilek, F. ; Endres, R. ; Schwalke, U. ;
Transactions on Electrical and Electronic Materials, volume 8, issue 1, 2007, Pages 1~4
DOI : 10.4313/TEEM.2007.8.1.001
This paper discusses two approaches for pre-polishing optimization of oxide chemical mechanical planarization (CMP) that can be used as alternatives to the commonly applied dummy structure insertion in shallow trench isolation (STI) and replacement gate (RG) technologies: reverse nitride masking (RNM) and oxide etchback (OEB). Wafers have been produced using each optimization technique and CMP tests have been performed. Dishing, erosion and global planarity have been investigated with the help of conductive atomic force microscopy (C-AFM). The results demonstrate the effectiveness of both techniques which yield excellent planarity without dummy structure related performance degradation due to capacitive coupling.
Study of Inhibition Characteristics of Slurry Additives in Copper CMP using Force Spectroscopy
Lee, Hyo-Sang ; Philipossian Ara ; Babu Suryadevara V. ; Patri Udaya B. ; Hong, Young-Ki ; Economikos Laertis ; Goldstein Michael ;
Transactions on Electrical and Electronic Materials, volume 8, issue 1, 2007, Pages 5~10
DOI : 10.4313/TEEM.2007.8.1.005
Using a reference slurry, ammonium dodecyl sulfate (ADS), an anionic and environmentally friendly surfactant, was investigated as an alternative to BTA for its inhibition and lubrication characteristics. Results demonstrated that the inhibition efficiency of ADS was superior to that of BTA. Coefficient of friction (COF) was the lowest when the slurry contained ADS. This suggested that adsorbed ADS on the surface provided lubricating action thereby reducing the wear between the contacting surfaces. Temperature results were consistent with the COF and removal rate data. ADS showed the lowest temperature rise again confirming the softening effect of the adsorbed surfactant layer and less energy dissipation due to friction. Spectral analysis of shear force showed that increasing the pad-wafer sliding velocity at constant wafer pressure shifted the high frequency spectral peaks to lower frequencies while increasing the variance of the frictional force. Addition of ADS reduced the fluctuating component of the shear force and the extent of the pre-existing stick-slip phenomena caused by the kinematics of the process and collision event between pad asperities with the wafer. By contrast, in the case of BTA, there were no such observed benefits but instead undesirable effects were seen at some polishing conditions. This work underscored the importance of real-time force spectroscopy in elucidating the adsorption, lubrication and inhibition of additives in slurries in CMP.
Development of Multiple CMP Monitoring System for Consumable Designs
Park, Sun-Joon ; Park, Boum-Young ; Kim, Sung-Ryul ; Jeong, Hae-Do ; Kim, Hyoung-Jae ;
Transactions on Electrical and Electronic Materials, volume 8, issue 1, 2007, Pages 11~14
DOI : 10.4313/TEEM.2007.8.1.011
Consumables used in Chemical Mechanical Polishing (CMP) have been played important role to improve quality and productivity. Since the properties of consumables constantly change with various reasons, such as shelf time, manufactured time, lot to lot variation from supplier and so on, CMP results are not constant during the process. Also, CMP process results are affected by multiple sources from wafer, conditioner, pad and slurry. Therefore, multiple sensing systems are required to monitor CMP process variation. In this paper, the authors focus on development of monitoring system for CMP process which consist of force, temperature and displacement sensor to measure the signal from CMP process. With monitoring systems mentioned above, complex CMP phenomena can be investigated more clearly.
Diamond Conditioner Wear Characterization for a Copper CMP Process
Boruckia, L. ; Zhuang, Y. ; Kikuma, R. ; Rikita, N. ; Yamashita, T. ; Nagasawa, K. ; Lee, H. ; Sun, T. ; Rosales-Yeomans, D. ; Philipossian, A. ; Stout, T ;
Transactions on Electrical and Electronic Materials, volume 8, issue 1, 2007, Pages 15~20
DOI : 10.4313/TEEM.2007.8.1.015
Conditioner wear, copper polish rates, pad temperature and coefficient of friction (COF) are measured for two novel Mitsubishi Materials Corporation designs during an extended wear and polishing test. Both designs are coated with a
film to reduce substrate wear and chemical attack. Using optical interferometry, changes in the coating that result in gradual changes in diamond exposure are measured. Theories of the COF, conditioning, and polishing are applied to explain the observed performance differences between the designs.
Effect of Channel Length in LDMOSFET on the Switching Characteristic of CMOS Inverter
Cui, Zhi-Yuan ; Kim, Nam-Soo ; Lee, Hyung-Gyoo ; Kim, Kyoung-Won ;
Transactions on Electrical and Electronic Materials, volume 8, issue 1, 2007, Pages 21~25
DOI : 10.4313/TEEM.2007.8.1.021
A two-dimensional TCAD MEDICI simulator was used to examine the voltage transfer characteristics, on-off switching properties and latch-up of a CMOS inverter as a function of the n-channel length and doping levels. The channel in a LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of a CMOS inverter. The digital logic levels of the output and input voltages were analyzed from the transfer curves and circuit operation. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.
Development of a Pad Conditioning Method for ILD CMP using a High Pressure Micro Jet System
Lee, Hyo-Sang ; DeNardis, Darren ; Philipossian, Ara ; Seike, Yoshiyuki ; Takaoka, Mineo ; Miyachi, Keiji ; Doi, Toshiro ;
Transactions on Electrical and Electronic Materials, volume 8, issue 1, 2007, Pages 26~31
DOI : 10.4313/TEEM.2007.8.1.026
The goal of this study is to determine if High Pressure Micro Jet (HPMJ) conditioning can be used as a substitute for, or in conjunction with, conventional diamond pad conditioning. Five conditioning methods were studied during which 50 ILD wafers were polished successively in a 100-mm scaled polisher and removal rate (RR), coefficient of friction (COF), pad flattening ratio (PFR) and scanning electron microscopy (SEM) measurements were obtained. Results indicated that PFR increased rapidly, and COF and removal rate decreased significantly, when conditioning was not employed. With diamond conditioning, both removal rate and COF were stable from wafer to wafer, and low PFR values were observed. SEM images indicated that clean grooves could be achieved by HPMJ pad conditioning, suggesting that HPMJ may have the potential to reduce micro scratches and defects caused by slurry abrasive particle residues inside grooves. Regardless of different pad conditioning methods, a linear correlation was observed between temperature, COF and removal rate, while an inverse relationship was seen between COF and PFR.
Effects of Alternating Magnetic Field Assisted Annealing of Pentacene Film for Organic Thin Film Transistor Applications
Park, Jae-Hoon ; Choi, Jong-Sun ;
Transactions on Electrical and Electronic Materials, volume 8, issue 1, 2007, Pages 32~35
DOI : 10.4313/TEEM.2007.8.1.032
In this article, a novel annealing technique using alternating magnetic field (AMF) is adopted to improve the electrical characteristics of pentacene film, thereby enhancing the performance of pentacene-based organic thin film transistors (OTFTs). According to the investigation results, the electrical conductivity in the pentacene film could be increased from 0.32 to 1.18 S/cm by annealing the pentacene film using AMF. And also, OTFTs with the pentacene film annealed by AMF exhibited an improved performance compared to the device without annealing. These results suggest that an annealing using AMF can be an effective method to improve the performance of devices based on organic semiconductors.
Passivation Layers for Organic Thin-film-transistors
Lee, Ho-Nyeon ; Lee, Young-Gu ; Ko, Ik-Hwan ; Kang, Sung-Kee ; Lee, Seong-Eui ; Oh, Tae-Sik ;
Transactions on Electrical and Electronic Materials, volume 8, issue 1, 2007, Pages 36~40
DOI : 10.4313/TEEM.2007.8.1.036
Inorganic layers, such as SiOxNy and SiOx deposited using plasma sublimation method, were tested as passivation layer for organic thin-film-transistors (OTFTs). OTFTs with bottom-gate and bottom-contact structure were fabricated using pentacene as organic semiconductor and an organic gate insulator. SiOxNy layer gave little change in characteristics of OTFTs, but SiOx layer degraded the performance of OTFTs severely. Inferior barrier properties related to its lower film density, higher water vapor transmission rate (WVTR) and damage due to process environment of oxygen of SiOx film could explain these results. Polyurea and polyvinyl acetates (PVA) were tested as organic passivation layers also. PVA showed good properties as a buffer layer to reduce the damage come from the vacuum deposition process of upper passivation layers. From these results, a multilayer structure with upper SiOxNy film and lower PVA film is expected to be a superior passivation layer for OTFTs.
Structural and Electrochemical Characterization of LiFePO
Synthesized by Hydrothermal Method
Jeon, Yeon-Su ; Jin, En-Mei ; Jin, Bo ; Jun, Dae-Kyoo ; Han, Zhen-Ji ; Gu, Hal-Bon ;
Transactions on Electrical and Electronic Materials, volume 8, issue 1, 2007, Pages 41~45
DOI : 10.4313/TEEM.2007.8.1.041
cathode materials were prepared by hydrothermal reaction. Carbon black was added to enhance the electrical conductivity of
. The structural and morphological performance of
-C powders were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM).
-C/Li cells were characterized electrochemically by cyclic voltammogram (CV), charge/discharge experiments and ac impedance spectroscopy. The results showed that the discharge capacity of
/Li cell was 147 mAh/g at the first cycle and 118 mAh/g after 30 cycles, respectively. The discharge capacity of
-C/Li cell with 5 wt% carbon black was the largest among
-C/Li cells, 133 mAh/g at the first cycle and 128 mAh/g after 30 cycles, respectively. It was demonstrated that cycling performance of
-C/Li cell with 5 wt% carbon black was better than that of
Liquid Crystal Alignment Effects on Nitrogen-doped Diamond like Carbon Layer by Ion Beam Alignment Method
Han, Jeong-Min ; Choi, Sung-Ho ; Kim, Byoung-Yong ; Han, Jin-Woo ; Kim, Jong-Hwan ; Kim, Young-Hwan ; Hwang, Jeoung-Yeon ; Lee, Sang-Keuk ; Ok, Chul-Ho ; Seo, Dae-Shik ;
Transactions on Electrical and Electronic Materials, volume 8, issue 1, 2007, Pages 46~50
DOI : 10.4313/TEEM.2007.8.1.046
We have studied the nematic liquid crystal (NLC) alignment effects on a nitrogen-doped diamond-like carbon (NDLC) thin film layer with ion beam irradiation. The pretilt angle for NLC on the NDLC surface with ion beam exposure was observed below 1 degree. Also, we had the good LC alignment characteristics on the NDLC thin films with ion beam exposure of 1800 eV. In thermal stability experiments, the alignment defect of the NLC on the NDLC surface with ion beam irradiation above annealing temperature of
can be observed. Therefore, the good thermal stability and LC alignment for NLC by ion beam aligned NDLC thin films can be achieved.