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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Transactions on Electrical and Electronic Materials
Journal Basic Information
Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 9, Issue 6 - Dec 2008
Volume 9, Issue 5 - Oct 2008
Volume 9, Issue 4 - Aug 2008
Volume 9, Issue 3 - Jun 2008
Volume 9, Issue 2 - Apr 2008
Volume 9, Issue 1 - Feb 2008
Selecting the target year
Study of Thermal Stability of Ni Silicide using Ni-V Alloy
Zhong, Zhun ; Oh, Soon-Young ; Lee, Won-Jae ; Zhang, Ying-Ying ; Jung, Soon-Yen ; Li, Shi-Guang ; Lee, Ga-Won ; Wang, Jin-Suk ; Lee, Hi-Deok ; Kim, Yeong-Cheol ;
Transactions on Electrical and Electronic Materials, volume 9, issue 2, 2008, Pages 47~51
DOI : 10.4313/TEEM.2008.9.2.047
In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to
effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to
and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.
XPS Investigation and Field Emission Property of the Ar Plasma Processed Carbon Nanotube Films
Lee, Sun-Woo ; Lee, Boong-Joo ; Oda, Tetsuji ;
Transactions on Electrical and Electronic Materials, volume 9, issue 2, 2008, Pages 52~56
DOI : 10.4313/TEEM.2008.9.2.052
Carbon nanotube films were fabricated by the catalytic CVD method. Plasma processed time effects on the field emission property were studied. The atomic structure was observed by using X-ray photoelectron spectroscopy (XPS). The surface composition changes were observed on the plasma processed CNT films. The O1s/C1s signal ratio and the Fls/Cls signal ratio changed from 1.1 % to 24.65 % and from 0 % to 3.1 % with plasma process time, respectively. We could guess it from these results that the Ar plasma process could change the surface composition effectively. In the case of the original-CNT film, no carbon shift was observed. In the case of the Ar plasma processed CNT films, however the oxygen related carbon shifts were observed. This oxygen related carbon shift at higher binding energy implies the increment of amount of the oxygen. It`s possible that the increment of these bonds between carbon and oxygen results in the improvement of field emission performance.
Preparation of PDP Red Phosphors by Impregnation Method and their Luminescence Properties
Han, Su-Yong ; Lee, Dong-Kyu ; Kim, Soo-Jong ; Han, Chung-Hwa ; Masaki, Takaki ;
Transactions on Electrical and Electronic Materials, volume 9, issue 2, 2008, Pages 57~61
DOI : 10.4313/TEEM.2008.9.2.057
:Eu phosphors were synthesized using the impregnation method in order to improve the performance of red-emitting phosphors for plasma display panels.
:Eu phosphors, with a particle size ranging from 150 and 200 nm, exhibited a strong red emission at around 615 nm. The emission intensity and particle size of the powders were controlled by adjusting the sintering temperature and raw material composition. The resulting particle size was very uniform and photoluminescence (PL) characteristic was excellent, being about twice that of commercial red phosphor.
Growth of Vertically Aligned CNTs with Ultra Thin Ni Catalysts
Ryu, Je-Hwang ; Yu, Yi-Yin ; Lee, Chang-Seok ; Jang, Jin ; Park, Kyu-Chang ; Kim, Ki-Seo ;
Transactions on Electrical and Electronic Materials, volume 9, issue 2, 2008, Pages 62~66
DOI : 10.4313/TEEM.2008.9.2.062
We report on the growth mechanism of vertically aligned carbon nanotubes (VACNTs) using ultra thin Ni catalysts and direct current plasma enhanced chemical vapor deposition (PECVD) system. The CNTs were grown with -600 V bias to substrate electrode and catalyst thickness variation of 0.07 nm to 3 nm. The CNT density was reduced with catalyst thickness reduction and increased growth time. Cone like CNTs were grown with ultra thin Ni thickness, and it results from an etch of carbon network by reactive etchant species and continuous carbon precipitation on CNT walls. Vertically aligned sparse CNTs can be grown with ultra thin Ni catalyst.
Realization and Analysis of p-Type ZnO:Al Thin Film by RF Magnetron Sputtering
Jin, Hu-Jie ; Jeong, Yun-Hwan ; Park, Choon-Bae ;
Transactions on Electrical and Electronic Materials, volume 9, issue 2, 2008, Pages 67~72
DOI : 10.4313/TEEM.2008.9.2.067
Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt%
was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from
, mobilities from 0.194 to
and resistivities from 0.0963 to
. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at
show a compact structure. Measurement for same sample shows that density is
which is smaller than theoretically calculated value of
. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).
Characterizations of i-a-Si:H and p-a-SiC:H Film using ICP-CVD Method to the Fabrication of Large-area Heterojunction Silicon Solar Cells
Jeong, Chae-Hwan ; Jeon, Min-Sung ; Kamisako, Koichi ;
Transactions on Electrical and Electronic Materials, volume 9, issue 2, 2008, Pages 73~78
DOI : 10.4313/TEEM.2008.9.2.073
We investigated for comparison of large-area i-a-Si:H and p-a-SiC:H film quality like thickness uniformity, optical bandgap and surface roughness using both ICP-CVD and PECVD on the large-area substrate(diameter of 100 mm). As a whole, films using ICP-CVD could be achieved much uniform thickness and bandgap of that using PECVD. For i-a-Si:H films, its uniformity of thickness and optical bandgap were 2.8 % and 0.38 %, respectively. Also, thickness and optical bandgap of p-a-SiC:H films using ICP-CVD could be obtained at 1.8 % and 0.3 %, respectively. In case of surface roughness, average surface roughness (below 5 nm) of ICP-CVD film could be much better than that (below 30 nm) of PECVD film. HIT solar cell with 2 wt%-AZO/p-a-SiC:H/i-a-Si:H/c-Si/Ag structure was fabricated and characterized with diameter of 152.3 mm in this large-area ICP-CVD system. Conversion efficiency of 9.123 % was achieved with a practical area of
, which can show the potential to fabrication of the large-area solar cell using ICP-CVD method.
Surface Cleaning of Polyethylene Terephthalate Film with Non-equilibrium Atmospheric Discharge Plasma
Sung, Youl-Moon ;
Transactions on Electrical and Electronic Materials, volume 9, issue 2, 2008, Pages 79~83
DOI : 10.4313/TEEM.2008.9.2.079
The dampness by treating the surface with polyethylene terephthalate (PET) film was measured to grasp the plasma parameters and was observed the surface condition with an atomic force microscope (AFM) to find the causes of the dampness. Also, the vibrational and rotational temperatures in the plasma were calculated after identifying the radicals within the plasma by analyzing the emission spectral with an emission spectrum. The hydrophilic properties were enhanced, by treating the surface of the PET film with non-equilibrium atmospheric discharge plasma. When the rotational temperature was 0.22 to 0.31 eV within the plasma, surface modification control could be easily carried out to surface treatment of PET film on non-equilibrium atmospheric pressure plasma.
Compensation of Electric Field Interference for Fiber-optic Voltage Measurement System
Cho, Jae-Kyong ;
Transactions on Electrical and Electronic Materials, volume 9, issue 2, 2008, Pages 84~88
DOI : 10.4313/TEEM.2008.9.2.084
In this paper, we analyze the errors associated with electric field interference for fiber-optic voltage sensors working in a three-phase electric system. For many practical conductor arrangements, the electric filed interference may cause errors unacceptable for the accuracy requirements of the sensors. We devised a real time compensation method for the interference by introducing geometric and weight factors. We realized the method using simple electronic circuits and obtained the real time compensated outputs with errors of 1 %.