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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Transactions on Electrical and Electronic Materials
Journal Basic Information
Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 9, Issue 6 - Dec 2008
Volume 9, Issue 5 - Oct 2008
Volume 9, Issue 4 - Aug 2008
Volume 9, Issue 3 - Jun 2008
Volume 9, Issue 2 - Apr 2008
Volume 9, Issue 1 - Feb 2008
Selecting the target year
A Study on the Thermal, Electrical Characteristics of Ge-Se-Te Chalcogenide Material for Use in Phase Change Memory
Nam, Ki-Hyun ; Chung, Hong-Bay ;
Transactions on Electrical and Electronic Materials, volume 9, issue 6, 2008, Pages 223~226
DOI : 10.4313/TEEM.2008.9.6.223
chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.
Solid Electrolytes Characteristics Based on Cu-Ge-Se for Analysis of Programmable Metallization Cell
Nam, Ki-Hyun ; Chung, Hong-Bay ;
Transactions on Electrical and Electronic Materials, volume 9, issue 6, 2008, Pages 227~230
DOI : 10.4313/TEEM.2008.9.6.227
Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.
Hydrogen and Alkali Ion Sensing Properties of Ion Implanted Silicon Nitride Thin Film
Park, Gu-Bum ;
Transactions on Electrical and Electronic Materials, volume 9, issue 6, 2008, Pages 231~236
DOI : 10.4313/TEEM.2008.9.6.231
B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.
Experimental Study of the Aspheric-plano Lens Fabrication using Compression Glass Molding
Ryu, Seong-Mi ; Kim, Hye-Jeong ;
Transactions on Electrical and Electronic Materials, volume 9, issue 6, 2008, Pages 237~242
DOI : 10.4313/TEEM.2008.9.6.237
The effects of the process parameters in the molding of aspheric glass lenses for camera phone modules have been investigated experimentally. The molding conditions were optimized with respect to the form accuracy (PV) (the response variable) of the molded lens. The experimental conditions were obtained by employing a factorial design method. From the analysis of variance (ANOVA) and P-value (significance level), the slow cooling rate was found to affect the response variable most significantly. The lens molded under the optimum molding condition showed a transcription ratio of 93.4%.
Annealing Behavior of Pretilt Angles on Polyimide Surface with Rubbing and Ion Beam Irradiation
Lee, Sang-Keuk ; Lim, Ji-Hun ; Oh, Byeong-Yun ; Kim, Young-Hwan ; Han, Jeong-Min ; Seo, Dae-Shik ;
Transactions on Electrical and Electronic Materials, volume 9, issue 6, 2008, Pages 243~246
DOI : 10.4313/TEEM.2008.9.6.243
We have studied the liquid crystal (LC) alignment, the pretilt angle generation, and the annealing behavior for a nematic liquid crystal (NLC) on the homogeneous polyimide (PI) surfaces by using the rubbing method and the ion beam (IB) method. An excellent LC alignment of the NLC on the PI surface with rubbing and IB irradiation were observed. The pretilt angle of NLC on the homogeneous PI surface for the rubbing method is decreased from
as rubbing time is increased, that of the for the IB irradiation method is decreased from
as the time of IB irradiation is increased. After the annealing, the pretilt angles of the rubbed PI surfaces increased up to
, these of the IB irradiated PI surfaces little increased. It is considered the side chain of the rubbed PI show the its abilities of the original capacities, while the side chain of the IB irradiated PI cannot show the its abilities of the original capacities due to the IB has already destroyed the side chain of the PI.
Low Temperature Preparation of Hafnium Oxide Thin Film for OTFT by Atomic Layer Deposition
Choi, Woon-Seop ;
Transactions on Electrical and Electronic Materials, volume 9, issue 6, 2008, Pages 247~250
DOI : 10.4313/TEEM.2008.9.6.247
Hafnium dioxide (
) thin film as a gate dielectric for organic thin film transistors is prepared by plasma enhanced atomic layer deposition (PEALD). Mostly crystalline of
film can be obtained with oxygen plasma and with water at relatively low temperature of
was deposited as a uniform rate of
/cycle. The pentacene TFT was prepared by thermal evaporation method with hafnium dioxide as a gate dielectric. The electrical properties of the OTFT were characterized.
Blue-white Reflective Cholesteric Liquid Crystal Displays by Single Liquid Crystal Layer
Choi, Woon-Seop ; Lee, Hee-Jeong ;
Transactions on Electrical and Electronic Materials, volume 9, issue 6, 2008, Pages 251~254
DOI : 10.4313/TEEM.2008.9.6.251
Blue-white reflective cholesteric liquid crystal display was prepared by a unique method of single liquid crystal layer, the combination of yellow color liquid crystal and blue color backplane. The dopant and host combination of chlolesteric liquid crystal affects the color spectrum. The CIE chromaticity coordinates of blue and white are (0.10, 0.16) and (0.29, 0.30), respectively. The relatively low driving voltages of 32 V for blue-white display are obtained.
Analysis of Magnetic Field Application Effect on Fault Current Limiting Characteristics of a Flux-lock Type SFCL
Lim, Sung-Hun ;
Transactions on Electrical and Electronic Materials, volume 9, issue 6, 2008, Pages 255~259
DOI : 10.4313/TEEM.2008.9.6.255
The magnetic field application effect on resistance of a high-
superconducting (HTSC) element comprising a flux-lock type superconducting fault current limiter (SFCL) was investigated. The YBCO thin film, which was etched into a meander line using a lithography, was used as a current limiting element of the flux-lock type SFCL. To increase the magnetic field applied into HTSC element, the capacitor was connected in series with a solenoid-type magnetic field coil installed in the third winding of the flux-lock type SFCL. There was no magnetic field application effect on the resistance of HTSC element despite the application of larger magnetic field into the HTSC element when a fault happened. The resistance of HTSC element, on the contrary, started to decrease at the point of four periods from a fault instant although the amplitude of the applied magnetic field increased.
Operational Characteristics of Superconducting Amplifier using Vortex Flux Flow
Lim, Sung-Hun ;
Transactions on Electrical and Electronic Materials, volume 9, issue 6, 2008, Pages 260~264
DOI : 10.4313/TEEM.2008.9.6.260
The operational characteristics of superconducting amplifier using vortex flux flow were analyzed from an equivalent circuit in which its current-voltage characteristics for the vortex motion in YBCO microbridge were reflected. For the analysis of operation as an amplifier, dc bias operational point for the superconducting amplifier is determined and then ac operational characteristics for the designed superconducting amplifier were investigated. The variation of transresistance, which describes the operational characteristics of superconducting amplifier, was estimated with respect to conditions of dc bias. The current and the voltage gains, which can be derived from the circuit for small signal analysis, were calculated at each operational point and compared with the results obtained from the numerical analysis for the small signal circuit. From our paper, the characteristics of amplification for superconducting flux flow transistor (SFFT) could be confirmed. The development of the superconducting amplifier applicable to various devices is expected.
A Study of Characteristic of Electrical-magnetic and Neutron Diffraction of Long-wire High-superconductor for Reducing Energy Losses
Jang, Mi-Hye ;
Transactions on Electrical and Electronic Materials, volume 9, issue 6, 2008, Pages 265~272
DOI : 10.4313/TEEM.2008.9.6.265
In this paper, AC losses of long wire Bi-2223 tapes with different twist pitch of superconducting core were fabricated, measured and analyzed. These samples produced by a powder-in-tube method are multi-filamentary tape with Ag matrix. Also, it`s produced by non-twist. The critical current measurement was carried out under the environment in Liquid nitrogen and in zero field by 4-prob method. And the Magnetic measurement was carried out under the environment of applied time-varying transport current by transport method. From experiment, the susceptibility measurements were conducted while cooling in a magnetic field. Flux loss measurements were conducted as a function of ramping rate, frequency and field direction. The AC flux loss increases as the twist-pitch of the tapes decreased, in agreement with the Norris Equation. Neutron-diffraction measurements have been carried out investigate the crystal structure, magnetic structures, and magnetic phase transitions in Bi-2223([Bi, Pb]:Sr:Ca:Cu:O).